Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion
A comparison is carried out of the switching characteristics of 4H-SiC conventional p-i-n rectifiers, where the p-layer is formed by aluminum doping during epitaxial growth, with that of p-i-n diodes, where the p-layer is formed by codiffusion of aluminum and boron. It is demonstrated that p-i-n dio...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-06, Vol.54 (6), p.1540-1544 |
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| container_title | IEEE transactions on electron devices |
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| creator | Bolotnikov, A.V. Muzykov, P.G. Grekov, A.E. Sudarshan, T.S. |
| description | A comparison is carried out of the switching characteristics of 4H-SiC conventional p-i-n rectifiers, where the p-layer is formed by aluminum doping during epitaxial growth, with that of p-i-n diodes, where the p-layer is formed by codiffusion of aluminum and boron. It is demonstrated that p-i-n diodes that are produced by high-temperature diffusion exhibit better switching capability as compared to epigrown p-i-n diodes. The improved behavior is attributed to the reduced lifetime region that is created by the diffused boron layer. Also, the reduced lifetime region was implemented in a SiC conventional epitaxial p-i-n structure by boron diffusion through the epitaxial aluminum-doped p + layer; the switching behavior of such a "hybrid" p-i-n diode is identical to that of the diffused one. The improvement of reverse-recovery characteristic is attributed to the effect of localized lifetime control by recombination centers that are created by diffused boron |
| doi_str_mv | 10.1109/TED.2007.896603 |
| format | Article |
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It is demonstrated that p-i-n diodes that are produced by high-temperature diffusion exhibit better switching capability as compared to epigrown p-i-n diodes. The improved behavior is attributed to the reduced lifetime region that is created by the diffused boron layer. Also, the reduced lifetime region was implemented in a SiC conventional epitaxial p-i-n structure by boron diffusion through the epitaxial aluminum-doped p + layer; the switching behavior of such a "hybrid" p-i-n diode is identical to that of the diffused one. The improvement of reverse-recovery characteristic is attributed to the effect of localized lifetime control by recombination centers that are created by diffused boron</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.896603</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum ; Applied sciences ; Boron ; Compound structure devices ; Diffusion ; Diffusion layers ; Diodes ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Epitaxial growth ; Epitaxy ; Exact sciences and technology ; Other multijunction devices. Power transistors. Thyristors ; p-i-n ; P-i-n diodes ; P-n junctions ; Performance evaluation ; reverse recovery ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiC ; Silicon carbide ; Switches ; Switching</subject><ispartof>IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1540-1544</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c479t-2ba0b33be0433307448188313a8ce968dcada4e611fe93aa7f71aa572ac06e553</citedby><cites>FETCH-LOGICAL-c479t-2ba0b33be0433307448188313a8ce968dcada4e611fe93aa7f71aa572ac06e553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4215160$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4215160$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18798291$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bolotnikov, A.V.</creatorcontrib><creatorcontrib>Muzykov, P.G.</creatorcontrib><creatorcontrib>Grekov, A.E.</creatorcontrib><creatorcontrib>Sudarshan, T.S.</creatorcontrib><title>Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A comparison is carried out of the switching characteristics of 4H-SiC conventional p-i-n rectifiers, where the p-layer is formed by aluminum doping during epitaxial growth, with that of p-i-n diodes, where the p-layer is formed by codiffusion of aluminum and boron. It is demonstrated that p-i-n diodes that are produced by high-temperature diffusion exhibit better switching capability as compared to epigrown p-i-n diodes. The improved behavior is attributed to the reduced lifetime region that is created by the diffused boron layer. Also, the reduced lifetime region was implemented in a SiC conventional epitaxial p-i-n structure by boron diffusion through the epitaxial aluminum-doped p + layer; the switching behavior of such a "hybrid" p-i-n diode is identical to that of the diffused one. The improvement of reverse-recovery characteristic is attributed to the effect of localized lifetime control by recombination centers that are created by diffused boron</description><subject>Aluminum</subject><subject>Applied sciences</subject><subject>Boron</subject><subject>Compound structure devices</subject><subject>Diffusion</subject><subject>Diffusion layers</subject><subject>Diodes</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Exact sciences and technology</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>p-i-n</subject><subject>P-i-n diodes</subject><subject>P-n junctions</subject><subject>Performance evaluation</subject><subject>reverse recovery</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiC</subject><subject>Silicon carbide</subject><subject>Switches</subject><subject>Switching</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkUtrGzEURkVpoW7adRfdiEKb1TjSSKPHsrHzAkMDcdZClq9ihZmRK80k9N9HU4cGsmhXQuh83-XqIPSZkjmlRJ-sz5bzmhA5V1oIwt6gGW0aWWnBxVs0I4SqSjPF3qMPOd-Xq-C8nqF01e1TfIAO-gFHj_lldRMW-Do-QsL7KlQ9Xoa4BXzzGAa3C_0dvobkY-ps7wCvdymOdzu8is62eBU8DKEDvIj9kGKLb_MUOI0pTjXejznE_iN6522b4dPzeYRuz8_Wi8tq9fPiavFjVTku9VDVG0s2jG2AcMYYkZwrqhSjzCoHWqits1vLQVDqQTNrpZfU2kbW1hEBTcOO0PGhtyz4a4Q8mC5kB21re4hjNpowwZQS4r-kkg2RhEpSyO__JBnnjEpNC_j1FXgfx9SXfY0STGpV02nuyQFyKeacwJt9Cp1Nvw0lZpJqilQzSTUHqSXx7bnW5vLjPhULIb_E1NT8Z_yXAxcA4O8zr2lDS80TMlSoqA</recordid><startdate>20070601</startdate><enddate>20070601</enddate><creator>Bolotnikov, A.V.</creator><creator>Muzykov, P.G.</creator><creator>Grekov, A.E.</creator><creator>Sudarshan, T.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20070601</creationdate><title>Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion</title><author>Bolotnikov, A.V. ; Muzykov, P.G. ; Grekov, A.E. ; Sudarshan, T.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c479t-2ba0b33be0433307448188313a8ce968dcada4e611fe93aa7f71aa572ac06e553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Aluminum</topic><topic>Applied sciences</topic><topic>Boron</topic><topic>Compound structure devices</topic><topic>Diffusion</topic><topic>Diffusion layers</topic><topic>Diodes</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Exact sciences and technology</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>p-i-n</topic><topic>P-i-n diodes</topic><topic>P-n junctions</topic><topic>Performance evaluation</topic><topic>reverse recovery</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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It is demonstrated that p-i-n diodes that are produced by high-temperature diffusion exhibit better switching capability as compared to epigrown p-i-n diodes. The improved behavior is attributed to the reduced lifetime region that is created by the diffused boron layer. Also, the reduced lifetime region was implemented in a SiC conventional epitaxial p-i-n structure by boron diffusion through the epitaxial aluminum-doped p + layer; the switching behavior of such a "hybrid" p-i-n diode is identical to that of the diffused one. The improvement of reverse-recovery characteristic is attributed to the effect of localized lifetime control by recombination centers that are created by diffused boron</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.896603</doi><tpages>5</tpages></addata></record> |
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| subjects | Aluminum Applied sciences Boron Compound structure devices Diffusion Diffusion layers Diodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Epitaxial growth Epitaxy Exact sciences and technology Other multijunction devices. Power transistors. Thyristors p-i-n P-i-n diodes P-n junctions Performance evaluation reverse recovery Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiC Silicon carbide Switches Switching |
| title | Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion |
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