Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices
An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to o...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2008-09, Vol.56 (9), p.2017-2024 |
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| container_end_page | 2024 |
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| container_issue | 9 |
| container_start_page | 2017 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 56 |
| creator | Melczarsky, I. Lonac, J.A. Filicori, F. Santarelli, A. |
| description | An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real hetero- junction bipolar transistor device. |
| doi_str_mv | 10.1109/TMTT.2008.2001956 |
| format | Article |
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The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real hetero- junction bipolar transistor device.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2008.2001956</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Application software ; Applied sciences ; Behavioral modeling ; Computer programs ; Couplings ; Design automation ; Devices ; Electron devices ; Electronics ; electrothermal ; Electrothermal effects ; Empirical analysis ; Equations ; Exact sciences and technology ; FETs ; heterojunction bipolar transistors (HBTs) ; intermodulation distortion ; Mathematical analysis ; Mathematical models ; Microwave and submillimeter wave devices, electron transfer devices ; microwave field-effect transistors (FETs) ; Microwaves ; modeling ; nonlinear ; Nonlinear dynamics ; Radar applications ; Radio frequency ; Radiofrequency identification ; Radiolocalization and radionavigation ; self-heating ; semiconductor device thermal factors ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Telecommunications ; Telecommunications and information theory ; thermal ; thermal impedance ; Volterra series</subject><ispartof>IEEE transactions on microwave theory and techniques, 2008-09, Vol.56 (9), p.2017-2024</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-9b02c283a397b114cb046312ed7c541b534776369e019e0093cddc269fea72b53</citedby><cites>FETCH-LOGICAL-c385t-9b02c283a397b114cb046312ed7c541b534776369e019e0093cddc269fea72b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4608716$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4608716$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20628892$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Melczarsky, I.</creatorcontrib><creatorcontrib>Lonac, J.A.</creatorcontrib><creatorcontrib>Filicori, F.</creatorcontrib><creatorcontrib>Santarelli, A.</creatorcontrib><title>Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real hetero- junction bipolar transistor device.</description><subject>Application software</subject><subject>Applied sciences</subject><subject>Behavioral modeling</subject><subject>Computer programs</subject><subject>Couplings</subject><subject>Design automation</subject><subject>Devices</subject><subject>Electron devices</subject><subject>Electronics</subject><subject>electrothermal</subject><subject>Electrothermal effects</subject><subject>Empirical analysis</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>heterojunction bipolar transistors (HBTs)</subject><subject>intermodulation distortion</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>microwave field-effect transistors (FETs)</subject><subject>Microwaves</subject><subject>modeling</subject><subject>nonlinear</subject><subject>Nonlinear dynamics</subject><subject>Radar applications</subject><subject>Radio frequency</subject><subject>Radiofrequency identification</subject><subject>Radiolocalization and radionavigation</subject><subject>self-heating</subject><subject>semiconductor device thermal factors</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>thermal</subject><subject>thermal impedance</subject><subject>Volterra series</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kctOGzEUhi1UpKahD1CxsZBaVkN9vyyrkAISlAXTteU4Z8BoZhzspBJvX48SsWDBxj6X7_zSOT9C3yi5oJTYn-1d214wQsz0UCvVEZpRKXVjlSaf0KwWTWOFIZ_Rl1KeayokMTP0sEjDxoctXg6bmGPwPb5La-jj-IhTh_-ksYbgM758Hf0QA26fIA-VWnYdhG3BccTLvkY5jfgS_sUA5QQdd74v8PXwz9Hf38t2cd3c3l_dLH7dNoEbuW3sirDADPfc6hWlIqyIUJwyWOsgBV1JLrRWXFmoCwEhlof1OjBlO_Ca1fYcne91Nzm97KBs3RBLgL73I6RdcUZLojStonP040OSC6GtFJPk2TvwOe3yWLdwRjFqKLO2QnQPhZxKydC5TY6Dz6-OEje54SY33OSGO7hRZ74fhH2pR-6yH0Msb4OMKGaMZZU73XMRAN7aQhGjqeL_AZqhkNk</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>Melczarsky, I.</creator><creator>Lonac, J.A.</creator><creator>Filicori, F.</creator><creator>Santarelli, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>thermal</topic><topic>thermal impedance</topic><topic>Volterra series</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Melczarsky, I.</creatorcontrib><creatorcontrib>Lonac, J.A.</creatorcontrib><creatorcontrib>Filicori, F.</creatorcontrib><creatorcontrib>Santarelli, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Melczarsky, I.</au><au>Lonac, J.A.</au><au>Filicori, F.</au><au>Santarelli, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2008-09-01</date><risdate>2008</risdate><volume>56</volume><issue>9</issue><spage>2017</spage><epage>2024</epage><pages>2017-2024</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real hetero- junction bipolar transistor device.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2008.2001956</doi><tpages>8</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Application software Applied sciences Behavioral modeling Computer programs Couplings Design automation Devices Electron devices Electronics electrothermal Electrothermal effects Empirical analysis Equations Exact sciences and technology FETs heterojunction bipolar transistors (HBTs) intermodulation distortion Mathematical analysis Mathematical models Microwave and submillimeter wave devices, electron transfer devices microwave field-effect transistors (FETs) Microwaves modeling nonlinear Nonlinear dynamics Radar applications Radio frequency Radiofrequency identification Radiolocalization and radionavigation self-heating semiconductor device thermal factors Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Telecommunications Telecommunications and information theory thermal thermal impedance Volterra series |
| title | Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices |
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