Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications
This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the D...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2008-09, Vol.18 (9), p.608-610 |
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| creator | LEE, Yong-Sub LEE, Mun-Woo JEONG, Yoon-Ha |
| description | This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc. |
| doi_str_mv | 10.1109/LMWC.2008.2002460 |
| format | Article |
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The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2008.2002460</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Adjacent channel leakage ratio (ACLR) ; Amplifiers ; Applied sciences ; Broadband amplifiers ; Channels ; Circuit properties ; class-E power amplifier ; Doherty amplifier ; Drains ; efficiency ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gallium nitride ; gallium nitride (GaN) ; Gallium nitrides ; HEMTs ; High electron mobility transistors ; III-V semiconductor materials ; Impedance ; Linearity ; Microwaves ; Multiaccess communication ; Power amplifiers ; Semiconductor devices ; Topology ; Wideband ; wideband code-division multiple access (WCDMA) ; Zero voltage switching</subject><ispartof>IEEE microwave and wireless components letters, 2008-09, Vol.18 (9), p.608-610</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-1426893c39d6edb6b80dd8867b2998162f3a533c98728aa500e8c7b87abb254e3</citedby><cites>FETCH-LOGICAL-c385t-1426893c39d6edb6b80dd8867b2998162f3a533c98728aa500e8c7b87abb254e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4624622$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4624622$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20667657$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, Yong-Sub</creatorcontrib><creatorcontrib>LEE, Mun-Woo</creatorcontrib><creatorcontrib>JEONG, Yoon-Ha</creatorcontrib><title>Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc.</description><subject>Adjacent channel leakage ratio (ACLR)</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Broadband amplifiers</subject><subject>Channels</subject><subject>Circuit properties</subject><subject>class-E power amplifier</subject><subject>Doherty amplifier</subject><subject>Drains</subject><subject>efficiency</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>III-V semiconductor materials</subject><subject>Impedance</subject><subject>Linearity</subject><subject>Microwaves</subject><subject>Multiaccess communication</subject><subject>Power amplifiers</subject><subject>Semiconductor devices</subject><subject>Topology</subject><subject>Wideband</subject><subject>wideband code-division multiple access (WCDMA)</subject><subject>Zero voltage switching</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1P4zAQhiO0K9Fl9wegvVgrwZ5S_J3xsaRdQCrisKAeLcdxwCiNg50e-u9J1IoDBy4zI80zrzR6suyc4DkhWF2t7zflnGIMU6Fc4pNsRoSAnBSSf5tmRnLCsDrNfqT0ijHhwMks-3_rn1_aPVo1jbfedQNahhcXhz1abPvWN95FdG2Sq1HoUNmalPIVegx9aMPzHjUhok25vF-gRT_S1gw-dOln9r0xbXK_jv0se_q3eixv8_XDzV25WOeWgRhywqkExSxTtXR1JSvAdQ0gi4oqBUTShhnBmFVQUDBGYOzAFhUUpqqo4I6dZX8PuX0MbzuXBr31ybq2NZ0Lu6ShEFgo4HIkL78kGedKcmAj-OcT-Bp2sRu_0CAZV-SQRg6QjSGl6BrdR781ca8J1pMNPdnQkw19tDHeXByDTbKmbaLprE8fhxRLWUhRjNzvA-edcx9rLscQStk7ri-QQw</recordid><startdate>20080901</startdate><enddate>20080901</enddate><creator>LEE, Yong-Sub</creator><creator>LEE, Mun-Woo</creator><creator>JEONG, Yoon-Ha</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080901</creationdate><title>Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications</title><author>LEE, Yong-Sub ; LEE, Mun-Woo ; JEONG, Yoon-Ha</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-1426893c39d6edb6b80dd8867b2998162f3a533c98728aa500e8c7b87abb254e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Adjacent channel leakage ratio (ACLR)</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Broadband amplifiers</topic><topic>Channels</topic><topic>Circuit properties</topic><topic>class-E power amplifier</topic><topic>Doherty amplifier</topic><topic>Drains</topic><topic>efficiency</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride</topic><topic>gallium nitride (GaN)</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>III-V semiconductor materials</topic><topic>Impedance</topic><topic>Linearity</topic><topic>Microwaves</topic><topic>Multiaccess communication</topic><topic>Power amplifiers</topic><topic>Semiconductor devices</topic><topic>Topology</topic><topic>Wideband</topic><topic>wideband code-division multiple access (WCDMA)</topic><topic>Zero voltage switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, Yong-Sub</creatorcontrib><creatorcontrib>LEE, Mun-Woo</creatorcontrib><creatorcontrib>JEONG, Yoon-Ha</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Yong-Sub</au><au>LEE, Mun-Woo</au><au>JEONG, Yoon-Ha</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2008-09-01</date><risdate>2008</risdate><volume>18</volume><issue>9</issue><spage>608</spage><epage>610</epage><pages>608-610</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2008.2002460</doi><tpages>3</tpages></addata></record> |
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| subjects | Adjacent channel leakage ratio (ACLR) Amplifiers Applied sciences Broadband amplifiers Channels Circuit properties class-E power amplifier Doherty amplifier Drains efficiency Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride gallium nitride (GaN) Gallium nitrides HEMTs High electron mobility transistors III-V semiconductor materials Impedance Linearity Microwaves Multiaccess communication Power amplifiers Semiconductor devices Topology Wideband wideband code-division multiple access (WCDMA) Zero voltage switching |
| title | Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications |
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