Semianalytical Modeling of Short-Channel Effects in Lightly Doped Silicon Trigate MOSFETs

A simple analytical expression of the 3-D potential distribution along the channel of lightly doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted approach of symmetric and asymmetric double-gate MOSFETs. The analytical solution is compared with the numerical sol...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-10, Vol.55 (10), p.2623-2631
Hauptverfasser:	Tsormpatzoglou, A., Dimitriadis, C.A., Clerc, R., Pananakakis, G., Ghibaudo, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical potential distribution Applied sciences Channels Computer simulation corner effect Corners Electric potential Electronics Equations Exact sciences and technology Logic gates Mathematical analysis Mathematical model Mathematical models MOSFETs Poisson equation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices short-channel effects (SCEs) Silicon silicon trigate (TG) MOSFETs Threshold voltage Transistors
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