The Effect of Field Oxide Recess on Cell V rm TH Distribution of nand Flash Cell Arrays
We present our study on the effect of field oxide recess on cell-programming-speed uniformity of nand flash cell memory. Due to the short distance between the control gate and the shallow-trench-isolation (STI) edge, the control-gate voltage generates uniform distribution of an electric field on the...
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| Veröffentlicht in: | IEEE electron device letters 2008-01, Vol.29 (9) |
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| container_issue | 9 |
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| container_title | IEEE electron device letters |
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| creator | Park, Mincheol Lee, Chang-Sub Hur, Sung-Hoi Kim, Keonsoo Lee, Won-Seong |
| description | We present our study on the effect of field oxide recess on cell-programming-speed uniformity of nand flash cell memory. Due to the short distance between the control gate and the shallow-trench-isolation (STI) edge, the control-gate voltage generates uniform distribution of an electric field on the STI edge and provides strong immunity to fabrication process variation in cell programming. Therefore, the optimized field oxide recess offers an inherently narrower cell V sub(TH) distribution, fastening multilevel-cell programming speed while minimizing the floating-gate interference. Experimental results on 63-nm cell arrays show that the cell V sub(TH) distribution is reduced by 18% or more as field oxide recess increases. |
| doi_str_mv | 10.1109/LED.2008.2001797 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_875050061</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>875050061</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_8750500613</originalsourceid><addsrcrecordid>eNqNi00PwUAURWdBoj72lm9nhTdUh6XQxkIikYaljPY1RkbLvDbh36vwA2zuTe45V4i-xJGUuBhvw_Vogjj_hFQL1RAeKl8OpxKDlmgzX-vd95XviWN8IQizjJISigwiQzaF3dOkBHtKiBmKHFZkLRzA3SDewNpw6cy5Kk1N6kuu8xQiq_ny9ZbO6Rd3RTPTlqn3644YRGG82gzvrnhUxOXpZjipfZ1TUfFprmY4Qwzk9H_zDS1xR0E</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>875050061</pqid></control><display><type>article</type><title>The Effect of Field Oxide Recess on Cell V rm TH Distribution of nand Flash Cell Arrays</title><source>IEEE Electronic Library (IEL)</source><creator>Park, Mincheol ; Lee, Chang-Sub ; Hur, Sung-Hoi ; Kim, Keonsoo ; Lee, Won-Seong</creator><creatorcontrib>Park, Mincheol ; Lee, Chang-Sub ; Hur, Sung-Hoi ; Kim, Keonsoo ; Lee, Won-Seong</creatorcontrib><description>We present our study on the effect of field oxide recess on cell-programming-speed uniformity of nand flash cell memory. Due to the short distance between the control gate and the shallow-trench-isolation (STI) edge, the control-gate voltage generates uniform distribution of an electric field on the STI edge and provides strong immunity to fabrication process variation in cell programming. Therefore, the optimized field oxide recess offers an inherently narrower cell V sub(TH) distribution, fastening multilevel-cell programming speed while minimizing the floating-gate interference. Experimental results on 63-nm cell arrays show that the cell V sub(TH) distribution is reduced by 18% or more as field oxide recess increases.</description><identifier>ISSN: 0741-3106</identifier><identifier>DOI: 10.1109/LED.2008.2001797</identifier><language>eng</language><subject>Arrays ; Electric potential ; Flash memory (computers) ; Oxides ; Programming ; Recesses ; Variability ; Voltage</subject><ispartof>IEEE electron device letters, 2008-01, Vol.29 (9)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Park, Mincheol</creatorcontrib><creatorcontrib>Lee, Chang-Sub</creatorcontrib><creatorcontrib>Hur, Sung-Hoi</creatorcontrib><creatorcontrib>Kim, Keonsoo</creatorcontrib><creatorcontrib>Lee, Won-Seong</creatorcontrib><title>The Effect of Field Oxide Recess on Cell V rm TH Distribution of nand Flash Cell Arrays</title><title>IEEE electron device letters</title><description>We present our study on the effect of field oxide recess on cell-programming-speed uniformity of nand flash cell memory. Due to the short distance between the control gate and the shallow-trench-isolation (STI) edge, the control-gate voltage generates uniform distribution of an electric field on the STI edge and provides strong immunity to fabrication process variation in cell programming. Therefore, the optimized field oxide recess offers an inherently narrower cell V sub(TH) distribution, fastening multilevel-cell programming speed while minimizing the floating-gate interference. Experimental results on 63-nm cell arrays show that the cell V sub(TH) distribution is reduced by 18% or more as field oxide recess increases.</description><subject>Arrays</subject><subject>Electric potential</subject><subject>Flash memory (computers)</subject><subject>Oxides</subject><subject>Programming</subject><subject>Recesses</subject><subject>Variability</subject><subject>Voltage</subject><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqNi00PwUAURWdBoj72lm9nhTdUh6XQxkIikYaljPY1RkbLvDbh36vwA2zuTe45V4i-xJGUuBhvw_Vogjj_hFQL1RAeKl8OpxKDlmgzX-vd95XviWN8IQizjJISigwiQzaF3dOkBHtKiBmKHFZkLRzA3SDewNpw6cy5Kk1N6kuu8xQiq_ny9ZbO6Rd3RTPTlqn3644YRGG82gzvrnhUxOXpZjipfZ1TUfFprmY4Qwzk9H_zDS1xR0E</recordid><startdate>20080101</startdate><enddate>20080101</enddate><creator>Park, Mincheol</creator><creator>Lee, Chang-Sub</creator><creator>Hur, Sung-Hoi</creator><creator>Kim, Keonsoo</creator><creator>Lee, Won-Seong</creator><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20080101</creationdate><title>The Effect of Field Oxide Recess on Cell V rm TH Distribution of nand Flash Cell Arrays</title><author>Park, Mincheol ; Lee, Chang-Sub ; Hur, Sung-Hoi ; Kim, Keonsoo ; Lee, Won-Seong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_8750500613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Arrays</topic><topic>Electric potential</topic><topic>Flash memory (computers)</topic><topic>Oxides</topic><topic>Programming</topic><topic>Recesses</topic><topic>Variability</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Mincheol</creatorcontrib><creatorcontrib>Lee, Chang-Sub</creatorcontrib><creatorcontrib>Hur, Sung-Hoi</creatorcontrib><creatorcontrib>Kim, Keonsoo</creatorcontrib><creatorcontrib>Lee, Won-Seong</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Mincheol</au><au>Lee, Chang-Sub</au><au>Hur, Sung-Hoi</au><au>Kim, Keonsoo</au><au>Lee, Won-Seong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effect of Field Oxide Recess on Cell V rm TH Distribution of nand Flash Cell Arrays</atitle><jtitle>IEEE electron device letters</jtitle><date>2008-01-01</date><risdate>2008</risdate><volume>29</volume><issue>9</issue><issn>0741-3106</issn><abstract>We present our study on the effect of field oxide recess on cell-programming-speed uniformity of nand flash cell memory. Due to the short distance between the control gate and the shallow-trench-isolation (STI) edge, the control-gate voltage generates uniform distribution of an electric field on the STI edge and provides strong immunity to fabrication process variation in cell programming. Therefore, the optimized field oxide recess offers an inherently narrower cell V sub(TH) distribution, fastening multilevel-cell programming speed while minimizing the floating-gate interference. Experimental results on 63-nm cell arrays show that the cell V sub(TH) distribution is reduced by 18% or more as field oxide recess increases.</abstract><doi>10.1109/LED.2008.2001797</doi></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Arrays Electric potential Flash memory (computers) Oxides Programming Recesses Variability Voltage |
| title | The Effect of Field Oxide Recess on Cell V rm TH Distribution of nand Flash Cell Arrays |
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