Bandstructure Effects in Silicon Nanowire Electron Transport

Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp 3 d 5 s* semiempirical atomistic tight-binding model coupled to a self-consistent Poisson solver is used for the disper...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1286-1297
Hauptverfasser:	Neophytou, N., Paul, A., Lundstrom, M.S., Klimeck, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Applied sciences bandstructure Dispersions effective mass Electronics Exact sciences and technology injection velocity MOSFETs Nanocomposites Nanomaterials Nanostructure nanowire Nanowires nonparabolicity Orientation Quantization quantum capacitance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices tight binding Transistors Transport Wire
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