Measurement Technique for the Static Output Characterization of High-Current Power MOSFETs
A technique for measuring the static output characteristics of high-current power metal-oxide-semiconductor field-effect transistors is presented. The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The techni...
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| Veröffentlicht in: | IEEE transactions on instrumentation and measurement 2007-08, Vol.56 (4), p.1347-1354 |
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| container_title | IEEE transactions on instrumentation and measurement |
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| creator | Lopez, T. Elferich, R. |
| description | A technique for measuring the static output characteristics of high-current power metal-oxide-semiconductor field-effect transistors is presented. The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast transient measurements. This, however, implies the excitation of electric parasitic impedances in the device under test (DUT). This paper describes how to control these disturbances and defines the measurement conditions upon which a specified minimum accuracy is guaranteed. Experimental results compare the performance of the measurement method with that of a conventional curve tracer. |
| doi_str_mv | 10.1109/TIM.2007.900146 |
| format | Article |
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The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast transient measurements. This, however, implies the excitation of electric parasitic impedances in the device under test (DUT). This paper describes how to control these disturbances and defines the measurement conditions upon which a specified minimum accuracy is guaranteed. Experimental results compare the performance of the measurement method with that of a conventional curve tracer.</description><identifier>ISSN: 0018-9456</identifier><identifier>EISSN: 1557-9662</identifier><identifier>DOI: 10.1109/TIM.2007.900146</identifier><identifier>CODEN: IEIMAO</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; Disturbances ; Electric power generation ; High current ; Impedance ; Instrumentation ; Measurement errors ; Measurement methods ; Measurement techniques ; measurement uncertainty errors ; MOSFETs ; parasitic impedances ; Power measurement ; power metal-oxide-semiconductor field-effect transistors (MOSFETs) ; self-heating ; Space vector pulse width modulation ; static output characteristics ; Stimulation ; Temperature sensors ; Testing ; Tracers ; Voltage</subject><ispartof>IEEE transactions on instrumentation and measurement, 2007-08, Vol.56 (4), p.1347-1354</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast transient measurements. This, however, implies the excitation of electric parasitic impedances in the device under test (DUT). This paper describes how to control these disturbances and defines the measurement conditions upon which a specified minimum accuracy is guaranteed. Experimental results compare the performance of the measurement method with that of a conventional curve tracer.</description><subject>Circuits</subject><subject>Disturbances</subject><subject>Electric power generation</subject><subject>High current</subject><subject>Impedance</subject><subject>Instrumentation</subject><subject>Measurement errors</subject><subject>Measurement methods</subject><subject>Measurement techniques</subject><subject>measurement uncertainty errors</subject><subject>MOSFETs</subject><subject>parasitic impedances</subject><subject>Power measurement</subject><subject>power metal-oxide-semiconductor field-effect transistors (MOSFETs)</subject><subject>self-heating</subject><subject>Space vector pulse width modulation</subject><subject>static output characteristics</subject><subject>Stimulation</subject><subject>Temperature sensors</subject><subject>Testing</subject><subject>Tracers</subject><subject>Voltage</subject><issn>0018-9456</issn><issn>1557-9662</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkMFLwzAYxYMoOKdnD16CF0_dkjRtmqMUdQPHhM2Ll5CmX1zH1s4kRfSvN6PiwdP38fi9x-MhdE3JhFIip-v5YsIIERNJCOX5CRrRLBOJzHN2ikZRKxLJs_wcXXi_JRHMuRihtwVo3zvYQxvwGsymbT56wLZzOGwAr4IOjcHLPhz6gMuNdtoEcM13lLsWdxbPmvdNUvbOHQNeuk9weLFcPT6s_SU6s3rn4er3jtFrlMtZ8rx8mpf3z4lJGQlJJesiEwyItQIs1DnwWtBCVvETFSe8klyCMZm2lltmakPrghWSaqZNTkw6RndD7sF1sbsPat94A7udbqHrvSpERjgVkkXy9h-57XrXxnKqyFNRyJTwCE0HyLjOewdWHVyz1-5LUaKOS6u4tDourYalo-NmcDQA8EdzJgRJ0_QHQBh6iQ</recordid><startdate>20070801</startdate><enddate>20070801</enddate><creator>Lopez, T.</creator><creator>Elferich, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070801</creationdate><title>Measurement Technique for the Static Output Characterization of High-Current Power MOSFETs</title><author>Lopez, T. ; Elferich, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-b9d8572e0ff7efed6e4d7189bd6e7b404b949ecc5aff4f2cdc1d82891a2ac60c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Circuits</topic><topic>Disturbances</topic><topic>Electric power generation</topic><topic>High current</topic><topic>Impedance</topic><topic>Instrumentation</topic><topic>Measurement errors</topic><topic>Measurement methods</topic><topic>Measurement techniques</topic><topic>measurement uncertainty errors</topic><topic>MOSFETs</topic><topic>parasitic impedances</topic><topic>Power measurement</topic><topic>power metal-oxide-semiconductor field-effect transistors (MOSFETs)</topic><topic>self-heating</topic><topic>Space vector pulse width modulation</topic><topic>static output characteristics</topic><topic>Stimulation</topic><topic>Temperature sensors</topic><topic>Testing</topic><topic>Tracers</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lopez, T.</creatorcontrib><creatorcontrib>Elferich, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on instrumentation and measurement</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lopez, T.</au><au>Elferich, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement Technique for the Static Output Characterization of High-Current Power MOSFETs</atitle><jtitle>IEEE transactions on instrumentation and measurement</jtitle><stitle>TIM</stitle><date>2007-08-01</date><risdate>2007</risdate><volume>56</volume><issue>4</issue><spage>1347</spage><epage>1354</epage><pages>1347-1354</pages><issn>0018-9456</issn><eissn>1557-9662</eissn><coden>IEIMAO</coden><abstract>A technique for measuring the static output characteristics of high-current power metal-oxide-semiconductor field-effect transistors is presented. The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast transient measurements. This, however, implies the excitation of electric parasitic impedances in the device under test (DUT). This paper describes how to control these disturbances and defines the measurement conditions upon which a specified minimum accuracy is guaranteed. Experimental results compare the performance of the measurement method with that of a conventional curve tracer.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TIM.2007.900146</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0018-9456 |
| ispartof | IEEE transactions on instrumentation and measurement, 2007-08, Vol.56 (4), p.1347-1354 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuits Disturbances Electric power generation High current Impedance Instrumentation Measurement errors Measurement methods Measurement techniques measurement uncertainty errors MOSFETs parasitic impedances Power measurement power metal-oxide-semiconductor field-effect transistors (MOSFETs) self-heating Space vector pulse width modulation static output characteristics Stimulation Temperature sensors Testing Tracers Voltage |
| title | Measurement Technique for the Static Output Characterization of High-Current Power MOSFETs |
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