Staggered Gain for 100+ GHz Broadband Amplifiers
A broadband amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback a...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2011-05, Vol.46 (5), p.1123-1136 |
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| container_end_page | 1136 |
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| container_issue | 5 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 46 |
| creator | Joohwa Kim Buckwalter, J F |
| description | A broadband amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback amplifier and a constructive wave amplifier, which achieves low group delay. The broadband amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 mm 2 including the pads and consumes 73 mW from a 2-V supply. |
| doi_str_mv | 10.1109/JSSC.2011.2109795 |
| format | Article |
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The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback amplifier and a constructive wave amplifier, which achieves low group delay. The broadband amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. 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(IEEE) May 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-663cd5c52aff0fd2d1e33467198159e08d4754d3b635f397327ed952f01996203</citedby><cites>FETCH-LOGICAL-c354t-663cd5c52aff0fd2d1e33467198159e08d4754d3b635f397327ed952f01996203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5733375$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5733375$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24190248$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Joohwa Kim</creatorcontrib><creatorcontrib>Buckwalter, J F</creatorcontrib><title>Staggered Gain for 100+ GHz Broadband Amplifiers</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A broadband amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback amplifier and a constructive wave amplifier, which achieves low group delay. The broadband amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 mm 2 including the pads and consumes 73 mW from a 2-V supply.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Bandwidth enhancement</subject><subject>broadband amplifier</subject><subject>Broadband amplifiers</subject><subject>Capacitance</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Group delay</subject><subject>Impedance</subject><subject>low group delay variation</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Ripples</subject><subject>SiGe BiCMOS</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>transimpedance amplifier</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE9LAzEQxYMoWKsfQLwsgniQrTP5s9kca9FWKXiogreQbpKyZbtbk_agn96Ulh48DY_5vcfMI-QaYYAI6vFtNhsNKCAOaJJSiRPSQyHKHCX7OiU9ACxzRQHOyUWMyyQ5L7FHYLYxi4ULzmZjU7eZ70KGAA_ZePKbPYXO2LlpbTZcrZva1y7ES3LmTRPd1WH2yefL88dokk_fx6-j4TSvmOCbvChYZUUlqPEevKUWHWO8kKhKFMpBabkU3LJ5wYRnSjIqnVWCekClCgqsT-73uevQfW9d3OhVHSvXNKZ13TbqUgpgqmAqkbf_yGW3DW06Tqv0ZeJAJAj3UBW6GIPzeh3qlQk_GkHvGtS7BvWuQX1oMHnuDsEmVqbxwbRVHY9GylEB5WXibvZc7Zw7roVkjEnB_gC4znT6</recordid><startdate>20110501</startdate><enddate>20110501</enddate><creator>Joohwa Kim</creator><creator>Buckwalter, J F</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20110501</creationdate><title>Staggered Gain for 100+ GHz Broadband Amplifiers</title><author>Joohwa Kim ; Buckwalter, J F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-663cd5c52aff0fd2d1e33467198159e08d4754d3b635f397327ed952f01996203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amplification</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Bandwidth enhancement</topic><topic>broadband amplifier</topic><topic>Broadband amplifiers</topic><topic>Capacitance</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Group delay</topic><topic>Impedance</topic><topic>low group delay variation</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Ripples</topic><topic>SiGe BiCMOS</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>transimpedance amplifier</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Joohwa Kim</creatorcontrib><creatorcontrib>Buckwalter, J F</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Joohwa Kim</au><au>Buckwalter, J F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Staggered Gain for 100+ GHz Broadband Amplifiers</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2011-05-01</date><risdate>2011</risdate><volume>46</volume><issue>5</issue><spage>1123</spage><epage>1136</epage><pages>1123-1136</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A broadband amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback amplifier and a constructive wave amplifier, which achieves low group delay. The broadband amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 mm 2 including the pads and consumes 73 mW from a 2-V supply.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2011.2109795</doi><tpages>14</tpages></addata></record> |
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| ispartof | IEEE journal of solid-state circuits, 2011-05, Vol.46 (5), p.1123-1136 |
| issn | 0018-9200 1558-173X |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplification Amplifiers Applied sciences Bandwidth Bandwidth enhancement broadband amplifier Broadband amplifiers Capacitance Circuit properties Circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Group delay Impedance low group delay variation Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Ripples SiGe BiCMOS Silicon germanides Silicon germanium transimpedance amplifier |
| title | Staggered Gain for 100+ GHz Broadband Amplifiers |
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