Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices
A comprehensive model is presented which enables the effects of ionizing radiation on bulk CMOS devices and parasitic structures to be simulated with closed form functions. The model adapts general equations for defect formation in uniform SiO 2 films to facilitate analytical calculations of trapped...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2009-08, Vol.56 (8), p.1870-1883 |
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| container_issue | 8 |
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| container_title | IEEE transactions on circuits and systems. I, Regular papers |
| container_volume | 56 |
| creator | Barnaby, H.J. McLain, M.L. Esqueda, I.S. Xiao Jie Chen |
| description | A comprehensive model is presented which enables the effects of ionizing radiation on bulk CMOS devices and parasitic structures to be simulated with closed form functions. The model adapts general equations for defect formation in uniform SiO 2 films to facilitate analytical calculations of trapped charge and interface trap buildup in radiation sensitive shallow trench isolation (STI) oxides. An approach whereby defect distributions along the bottom and sidewall of the STI are calculated, incorporated into implicit surface potential equations, and ultimately used to model radiation-induced leakage currents in MOSFET structures and integrated circuits is described. The results of the modeling approach are compared to experimental data obtained on 130 and 90 nm devices and circuits. The features having the greatest impact on the increased radiation tolerance of advanced deep-submicron bulk CMOS technologies are also discussed. These features include increased doping levels along the STI sidewall. |
| doi_str_mv | 10.1109/TCSI.2009.2028411 |
| format | Article |
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The model adapts general equations for defect formation in uniform SiO 2 films to facilitate analytical calculations of trapped charge and interface trap buildup in radiation sensitive shallow trench isolation (STI) oxides. An approach whereby defect distributions along the bottom and sidewall of the STI are calculated, incorporated into implicit surface potential equations, and ultimately used to model radiation-induced leakage currents in MOSFET structures and integrated circuits is described. The results of the modeling approach are compared to experimental data obtained on 130 and 90 nm devices and circuits. The features having the greatest impact on the increased radiation tolerance of advanced deep-submicron bulk CMOS technologies are also discussed. 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(IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-5371594a7805165fa456c78e3269765826b0017e511668bd95121dd18dd270b53</citedby><cites>FETCH-LOGICAL-c421t-5371594a7805165fa456c78e3269765826b0017e511668bd95121dd18dd270b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5175258$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5175258$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Barnaby, H.J.</creatorcontrib><creatorcontrib>McLain, M.L.</creatorcontrib><creatorcontrib>Esqueda, I.S.</creatorcontrib><creatorcontrib>Xiao Jie Chen</creatorcontrib><title>Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description>A comprehensive model is presented which enables the effects of ionizing radiation on bulk CMOS devices and parasitic structures to be simulated with closed form functions. The model adapts general equations for defect formation in uniform SiO 2 films to facilitate analytical calculations of trapped charge and interface trap buildup in radiation sensitive shallow trench isolation (STI) oxides. An approach whereby defect distributions along the bottom and sidewall of the STI are calculated, incorporated into implicit surface potential equations, and ultimately used to model radiation-induced leakage currents in MOSFET structures and integrated circuits is described. The results of the modeling approach are compared to experimental data obtained on 130 and 90 nm devices and circuits. The features having the greatest impact on the increased radiation tolerance of advanced deep-submicron bulk CMOS technologies are also discussed. These features include increased doping levels along the STI sidewall.</description><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Construction</subject><subject>Defects</subject><subject>Devices</subject><subject>Equations</subject><subject>Integrated circuit modeling</subject><subject>Interface traps</subject><subject>Ionizing radiation</subject><subject>Leakage current</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>MOSFET circuits</subject><subject>oxide trapped charge</subject><subject>radiation-induced leakage</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>shallow trench isolation</subject><subject>Solid modeling</subject><subject>Solid state circuits</subject><subject>surface potential</subject><subject>total ionizing dose</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kcFLwzAUxoMoOKd_gHgJHvRUzUuaNDnKnDpYGdh5DlmTSkbXzKYT9K-3ZcODBy_fezx-3wePD6FLIHcARN0vJ8XsjhKieqEyBThCI-BcJkQScTzsqUoko_IUncW4JoQqwmCE8jxYV_vmHc9C47-H5dVYbzofGjytKld2EfsGF6H2Fhed6RzOe2m9qSM2jcWTfFHgR_fpSxfP0UnV393FYY7R29N0OXlJ5ovn2eRhnpQphS7hLAOuUpNJwkHwyqRclJl0jAqVCS6pWBECmeMAQsiVVRwoWAvSWpqRFWdjdLvP3bbhY-dipzc-lq6uTePCLmqZccKEpAN58y_JUqU4FdCD13_Addi1Tf-FlgLEEMd6CPZQ2YYYW1fpbes3pv3SQPTQgx560EMP-tBD77nae7xz7pfnkHHKJfsBToiACw</recordid><startdate>20090801</startdate><enddate>20090801</enddate><creator>Barnaby, H.J.</creator><creator>McLain, M.L.</creator><creator>Esqueda, I.S.</creator><creator>Xiao Jie Chen</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Barnaby, H.J.</au><au>McLain, M.L.</au><au>Esqueda, I.S.</au><au>Xiao Jie Chen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2009-08-01</date><risdate>2009</risdate><volume>56</volume><issue>8</issue><spage>1870</spage><epage>1883</epage><pages>1870-1883</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>A comprehensive model is presented which enables the effects of ionizing radiation on bulk CMOS devices and parasitic structures to be simulated with closed form functions. 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| identifier | ISSN: 1549-8328 |
| ispartof | IEEE transactions on circuits and systems. I, Regular papers, 2009-08, Vol.56 (8), p.1870-1883 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuits CMOS CMOS technology Construction Defects Devices Equations Integrated circuit modeling Interface traps Ionizing radiation Leakage current Mathematical analysis Mathematical models MOSFET circuits oxide trapped charge radiation-induced leakage Semiconductor device modeling Semiconductor process modeling shallow trench isolation Solid modeling Solid state circuits surface potential total ionizing dose |
| title | Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices |
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