Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology
This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigat...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-07, Vol.54 (7), p.1597-1604 |
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| container_title | IEEE transactions on electron devices |
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| creator | Tan, Hiang Teik Hunter, Ian C. Snowden, Christopher M. |
| description | This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included. |
| doi_str_mv | 10.1109/TED.2007.898459 |
| format | Article |
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A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.898459</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>2-D electron gas charge-coupled device (2DEG-CCDs) ; Aluminum gallium arsenides ; Applied sciences ; Charge coupled devices ; Charge transfer ; Charge transfer devices ; Circuit properties ; Circuits of signal characteristics conditioning (including delay circuits) ; Compound structure devices ; Delay line ; Devices ; Direct current ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Gates ; Indium gallium arsenides ; Logic gates ; Mathematical model ; Mathematical models ; PHEMTs ; quasi-2-D physical modeling ; Semiconductor electronics. Microelectronics. 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(IEEE) 2007</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c391t-8b1f822aef7864a8f5f2b1f287be5b83a190691f4be78c249aa5f60c51581af13</citedby><cites>FETCH-LOGICAL-c391t-8b1f822aef7864a8f5f2b1f287be5b83a190691f4be78c249aa5f60c51581af13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4252384$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4252384$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18898892$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tan, Hiang Teik</creatorcontrib><creatorcontrib>Hunter, Ian C.</creatorcontrib><creatorcontrib>Snowden, Christopher M.</creatorcontrib><title>Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included.</description><subject>2-D electron gas charge-coupled device (2DEG-CCDs)</subject><subject>Aluminum gallium arsenides</subject><subject>Applied sciences</subject><subject>Charge coupled devices</subject><subject>Charge transfer</subject><subject>Charge transfer devices</subject><subject>Circuit properties</subject><subject>Circuits of signal characteristics conditioning (including delay circuits)</subject><subject>Compound structure devices</subject><subject>Delay line</subject><subject>Devices</subject><subject>Direct current</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gates</subject><subject>Indium gallium arsenides</subject><subject>Logic gates</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>PHEMTs</subject><subject>quasi-2-D physical modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor process modeling</subject><subject>simulated charge transfer</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1PwkAQxTdGExE9e_DSmBhPhf1sZ49YKpBgPFjPm6XsYknZYpce-O9dUqKJp5eZ-b2XyUPonuARIViOi3w6ohinI5DAhbxAAyJEGsuEJ5dogDGBWDJg1-jG-20YE87pAOUf1a6r9aFqXKTdOpoaX21c1NhoUs_0xI8X7iRRlk199KK9WUeB3M_ztyIqTPnlmrrZHG_RldW1N3dnHaLP17zI5vHyfbbIJsu4ZJIcYlgRC5RqY1NIuAYrLA0rCunKiBUwTSROJLF8ZVIoKZdaC5vgUhABRFvChui5z923zXdn_EHtKl-autbONJ1XkArMhMQ8kI__yG3TtS48pyBhqZQCiwCNe6hsG-9bY9W-rXa6PSqC1alUFUpVp1JVX2pwPJ1jtS91bVvtysr_2SBwIGngHnquMsb8njkVlAFnP0pHfHg</recordid><startdate>20070701</startdate><enddate>20070701</enddate><creator>Tan, Hiang Teik</creator><creator>Hunter, Ian C.</creator><creator>Snowden, Christopher M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20070701</creationdate><title>Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology</title><author>Tan, Hiang Teik ; Hunter, Ian C. ; Snowden, Christopher M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c391t-8b1f822aef7864a8f5f2b1f287be5b83a190691f4be78c249aa5f60c51581af13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>2-D electron gas charge-coupled device (2DEG-CCDs)</topic><topic>Aluminum gallium arsenides</topic><topic>Applied sciences</topic><topic>Charge coupled devices</topic><topic>Charge transfer</topic><topic>Charge transfer devices</topic><topic>Circuit properties</topic><topic>Circuits of signal characteristics conditioning (including delay circuits)</topic><topic>Compound structure devices</topic><topic>Delay line</topic><topic>Devices</topic><topic>Direct current</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gates</topic><topic>Indium gallium arsenides</topic><topic>Logic gates</topic><topic>Mathematical model</topic><topic>Mathematical models</topic><topic>PHEMTs</topic><topic>quasi-2-D physical modeling</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor process modeling</topic><topic>simulated charge transfer</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tan, Hiang Teik</creatorcontrib><creatorcontrib>Hunter, Ian C.</creatorcontrib><creatorcontrib>Snowden, Christopher M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tan, Hiang Teik</au><au>Hunter, Ian C.</au><au>Snowden, Christopher M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-07-01</date><risdate>2007</risdate><volume>54</volume><issue>7</issue><spage>1597</spage><epage>1604</epage><pages>1597-1604</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.898459</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | 2-D electron gas charge-coupled device (2DEG-CCDs) Aluminum gallium arsenides Applied sciences Charge coupled devices Charge transfer Charge transfer devices Circuit properties Circuits of signal characteristics conditioning (including delay circuits) Compound structure devices Delay line Devices Direct current Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gallium arsenide Gates Indium gallium arsenides Logic gates Mathematical model Mathematical models PHEMTs quasi-2-D physical modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling simulated charge transfer Transistors |
| title | Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology |
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