Highly Linear RF CMOS Variable Attenuators With Adaptive Body Biasing

Several approaches to design a linear attenuator have been analyzed in terms of the transistor impedance variation, linearity, frequency responses, and circuit complexity. This paper proposes a novel method of using an adaptive bootstrapped body biasing. The method allows the attenuator to have maxi...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2011-05, Vol.46 (5), p.1023-1033
Hauptverfasser:	HUANG, Yan-Yu, WOO, Wangmyong, YOON, Youngchang, LEE, Chang-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Attenuation Attenuators body effect bootstrapped body bias Circuit properties Circuits CMOS CMOS attenuators CMOS integrated circuits Complexity Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronics Exact sciences and technology highly linear attenuators Immune system Impedance Integrated circuits Linearity Materials handling Maximum power Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise levels parasitic effects Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors variable attenuators
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