Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

In this paper, by solving the 1-D Poisson equation using appropriate boundary conditions, we report a closed-form surface potential solution for all the three surfaces (gate oxide-silicon film interface, silicon-film-buried oxide interface, and buried oxide-substrate interface) of fully depleted sil...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-03, Vol.55 (3), p.789-795
Hauptverfasser:	Agarwal, P., Saraswat, G., Kumar, M.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge Compact modeling Depletion Devices Electric potential Electronics Exact sciences and technology Exact solutions fully depleted silicon-on-insulator (SOI) MOSFET Integrated circuit modeling Mathematical model Mathematical models MOSFET circuits MOSFETs numerical solution Poisson equation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon films Substrates surface potential threshold voltage Transistors
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