A New 12-Term OpenaShortaLoad De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures
A new algorithm for open-short-load de-embedding of on-wafer S -parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolvin...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2010-02, Vol.58 (2), p.419-433 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Tiemeijer, Luuk F Pijper, Ralf MT van Steenwijk, JAnne van der Heijden, Edwin |
| description | A new algorithm for open-short-load de-embedding of on-wafer S -parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared. |
| doi_str_mv | 10.1109/TMTT.2009.2038453 |
| format | Article |
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Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. 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| source | IEEE Electronic Library (IEL) |
| subjects | Algorithms Devices Dummies Microwaves MOSFETs Ports Radio frequencies |
| title | A New 12-Term OpenaShortaLoad De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures |
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