Phantom force induced by tunneling current: a characterization on Si(111)

Phantom force induced by tunneling current: a characterization on Si(111)

Simultaneous measurements of tunneling current and atomic forces provide complementary atomic-scale data of the electronic and structural properties of surfaces and adsorbates. With these data, we characterize a strong impact of the tunneling current on the measured force on samples with limited con...

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Veröffentlicht in:Physical review letters 2011-06, Vol.106 (22), p.226801-226801, Article 226801
Hauptverfasser: Weymouth, A J, Wutscher, T, Welker, J, Hofmann, T, Giessibl, F J
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container_title Physical review letters
container_volume 106
creator Weymouth, A J
Wutscher, T
Welker, J
Hofmann, T
Giessibl, F J
description Simultaneous measurements of tunneling current and atomic forces provide complementary atomic-scale data of the electronic and structural properties of surfaces and adsorbates. With these data, we characterize a strong impact of the tunneling current on the measured force on samples with limited conductivity. The effect is a lowering of the effective gap voltage through sample resistance which in turn lowers the electrostatic attraction, resulting in an apparently repulsive force. This effect is expected to occur on other low-conductance samples, such as adsorbed molecules, and to strongly affect Kelvin probe measurements when tunneling occurs.
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title Phantom force induced by tunneling current: a characterization on Si(111)
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