Real-time coverage monitoring of initial oxidation processes on Si(001) by means of surface differential reflectance
Initial oxidation processes on Si(001) have been studied by means of surface differential reflectance (SDR). The time courses of the SDR spectra measured during thermal oxidation at 820 and 920 K allowed two different growth modes, Langmuir-type adsorption and two-dimensional island growth, to be di...
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Veröffentlicht in: | Journal of physics. Condensed matter 2006-05, Vol.18 (17), p.L209-L216 |
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Format: | Artikel |
Sprache: | eng |
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