Real-time coverage monitoring of initial oxidation processes on Si(001) by means of surface differential reflectance

Initial oxidation processes on Si(001) have been studied by means of surface differential reflectance (SDR). The time courses of the SDR spectra measured during thermal oxidation at 820 and 920 K allowed two different growth modes, Langmuir-type adsorption and two-dimensional island growth, to be di...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Condensed matter 2006-05, Vol.18 (17), p.L209-L216
Hauptverfasser: Takizawa, J, Ohno, S, Koizumi, J, Shudo, K, Tanaka, M
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!