Choice of Generation Volume Models for Electron Beam Induced Current Computation

The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or interaction volume. The generation volume affects the electron beam-induced current (EBIC) profile. This effect of the generation volume on the EBIC profile is particularly...

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Veröffentlicht in:	IEEE transactions on electron devices 2009-05, Vol.56 (5), p.1094-1099
Hauptverfasser:	Kurniawan, O., Ong, V.K.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge carrier processes charge injection Compound structure devices Computation Computational modeling Computer simulation Derivatives Devices electron-beam applications Electronics Exact sciences and technology Junctions Mathematical model Mathematical models Monte Carlo methods Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor junctions semiconductor materials measurements Shape simulation Solid modeling Spatial distribution
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