The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

The mechanism for ionizing radiation damage in multi-finger SOI CMOS devices is presented for the first time. We analyzed the effects of shallow-trench isolation on ionizing radiation response of 65 nm Silicon-On-Insulator (SOI) CMOS technology. The radiation response of the CMOS devices was investi...

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