Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe

Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In c...

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Veröffentlicht in:	IEEE transactions on nuclear science 2009-08, Vol.56 (4), p.1758-1762
Hauptverfasser:	Belas, E., Bugar, M., Grill, R., Franc, J., Hoschl, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Cadmium Cadmium tellurides CdTe Conducting materials Conductivity Contracts Crystalline materials Crystals diffusion Electrical resistivity Gamma ray detectors Inclusions Overpressure Phase detection Precipitates Precipitation Tellurium Temperature measurement
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