Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

We have proposed a single metal/dual high- k gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high- k dielectrics, such as MgO- and Al 2 O 3 -containing HfSiON for n- and p-type MISFETs,...

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Veröffentlicht in:	IEEE transactions on electron devices 2009-01, Vol.56 (1), p.85-92
Hauptverfasser:	Mise, N., Morooka, T., Eimori, T., Ono, T., Sato, M., Kamiyama, S., Nara, Y., Ohji, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Devices Dielectrics Electrodes Gates hbox{Al}_{2}\hbox{O}_{3} high- k gate dielectric Logic gates metal gate Metals MgO MISFETs Proposals Silicon compounds Stacks Threshold voltage Tin
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container_title	IEEE transactions on electron devices
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creator	Mise, N. Morooka, T. Eimori, T. Ono, T. Sato, M. Kamiyama, S. Nara, Y. Ohji, Y.
description	We have proposed a single metal/dual high- k gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high- k dielectrics, such as MgO- and Al 2 O 3 -containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which will suppress the variation in device performance. Based on this device concept, we have actually fabricated W/TiN/HfMgSiON n-type MISFETs and W/TiN/HfAlSiO p-type MISFETs and have successfully demonstrated a low threshold voltage operation for both of n- and p-type MISFETs.
doi_str_mv	10.1109/TED.2008.2007830
format	Article
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The threshold voltage is controlled by the dual high- k dielectrics, such as MgO- and Al 2 O 3 -containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which will suppress the variation in device performance. Based on this device concept, we have actually fabricated W/TiN/HfMgSiON n-type MISFETs and W/TiN/HfAlSiO p-type MISFETs and have successfully demonstrated a low threshold voltage operation for both of n- and p-type MISFETs.</abstract><pub>IEEE</pub><doi>10.1109/TED.2008.2007830</doi><tpages>8</tpages></addata></record>
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subjects	Annealing Devices Dielectrics Electrodes Gates hbox{Al}_{2}\hbox{O}_{3} high- k gate dielectric Logic gates metal gate Metals MgO MISFETs Proposals Silicon compounds Stacks Threshold voltage Tin
title	Proposal of Single Metal/Dual High- k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control
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