Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation

We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event effects. The inclusion of isolation is shown to have no effect on the dc or ac performance of the nominal device, and likewise does not reduce the...

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Veröffentlicht in:	IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3402-3407
Hauptverfasser:	Diestelhorst, R.M., Phillips, S.D., Appaswamy, A., Sutton, A.K., Cressler, J.D., Pellish, J.A., Reed, R.A., Vizkelethy, G., Marshall, P.W., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge Devices Emittance Germanium silicon alloys Heterojunction bipolar transistors Isolation technology Microelectronics Nanoscale devices Nanostructure Performance evaluation Pulse width modulation radiation effects Radiation hardening Reduction SiGe HBT Silicon germanides Silicon germanium single event effects Space technology Strikes Trenches
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