The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
► Use a nitrogen plasma to successfully introduce nitrogen into SiO 2/SiC interface. ► N Conc. at the interface is 1 × 10 14 cm −2, ∼1/6 of the saturated N Conc. by NO anneal. ► This process reduces D IT and results in peak channel mobility at about 50 cm 2/V s. We report results on the introduction...
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| Veröffentlicht in: | Solid-state electronics 2011-03, Vol.57 (1), p.76-79 |
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| container_issue | 1 |
| container_start_page | 76 |
| container_title | Solid-state electronics |
| container_volume | 57 |
| creator | Zhu, Xingguang Ahyi, Ayayi C. Li, Mingyu Chen, Zengjun Rozen, John Feldman, Leonard C. Williams, John R. |
| description | ► Use a nitrogen plasma to successfully introduce nitrogen into SiO
2/SiC interface. ► N Conc. at the interface is 1
×
10
14
cm
−2, ∼1/6 of the saturated N Conc. by NO anneal. ► This process reduces
D
IT and results in peak channel mobility at about 50
cm
2/V
s.
We report results on the introduction of nitrogen at the SiC/SiO
2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an ‘NO-like’ mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide. |
| doi_str_mv | 10.1016/j.sse.2010.12.002 |
| format | Article |
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2/SiC interface. ► N Conc. at the interface is 1
×
10
14
cm
−2, ∼1/6 of the saturated N Conc. by NO anneal. ► This process reduces
D
IT and results in peak channel mobility at about 50
cm
2/V
s.
We report results on the introduction of nitrogen at the SiC/SiO
2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an ‘NO-like’ mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2010.12.002</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Annealing ; Applied sciences ; Breakdown ; Channel mobility ; Channels ; Compound structure devices ; Density ; Electronics ; Exact sciences and technology ; Interface trap density ; MOS devices ; Oxide interface ; Oxides ; Plasma nitridation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon carbide</subject><ispartof>Solid-state electronics, 2011-03, Vol.57 (1), p.76-79</ispartof><rights>2010</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c425t-bfe6dbc6ee35f7ce73d5742ad1b0c2d715be21b40b41b0da6fd4ac0220e073653</citedby><cites>FETCH-LOGICAL-c425t-bfe6dbc6ee35f7ce73d5742ad1b0c2d715be21b40b41b0da6fd4ac0220e073653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110110004223$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23900424$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhu, Xingguang</creatorcontrib><creatorcontrib>Ahyi, Ayayi C.</creatorcontrib><creatorcontrib>Li, Mingyu</creatorcontrib><creatorcontrib>Chen, Zengjun</creatorcontrib><creatorcontrib>Rozen, John</creatorcontrib><creatorcontrib>Feldman, Leonard C.</creatorcontrib><creatorcontrib>Williams, John R.</creatorcontrib><title>The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices</title><title>Solid-state electronics</title><description>► Use a nitrogen plasma to successfully introduce nitrogen into SiO
2/SiC interface. ► N Conc. at the interface is 1
×
10
14
cm
−2, ∼1/6 of the saturated N Conc. by NO anneal. ► This process reduces
D
IT and results in peak channel mobility at about 50
cm
2/V
s.
We report results on the introduction of nitrogen at the SiC/SiO
2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an ‘NO-like’ mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Breakdown</subject><subject>Channel mobility</subject><subject>Channels</subject><subject>Compound structure devices</subject><subject>Density</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interface trap density</subject><subject>MOS devices</subject><subject>Oxide interface</subject><subject>Oxides</subject><subject>Plasma nitridation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon carbide</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KxDAQx4MouH48gLdcxFPXSZq2u3iSxS9QPOx6Dmky0SxtsiZV8OY7-IY-iSkrHj0NM_zmP8yPkBMGUwasPl9PU8Iph7HnUwC-QyZs1swLLqDaJROAclawjO6Tg5TWkImawYT0qxekaC3qgQZLvRtieEZPN51KvaLKe1RdosFT5weMVmmkQ1QbatAnN3xkwlD9MnId7UPrunFoQ6Ti9vvza-kW9OFxmel3pzEdkT2b4_D4tx6Sp-ur1eK2uH-8uVtc3hda8GooWou1aXWNWFa20diUpmoEV4a1oLlpWNUiZ62AVuSJUbU1QmngHBCasq7KQ3K2zd3E8PqGaZC9Sxq7TnkMb0nO6vlM8JKxTLItqWNIKaKVm-h6FT8kAzmalWuZzcrRrGRcZm955_Q3XSWtOhuV1y79LfJyDiC4yNzFlsP86rvDKJN26DUaF7NvaYL758oPbfePoA</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Zhu, Xingguang</creator><creator>Ahyi, Ayayi C.</creator><creator>Li, Mingyu</creator><creator>Chen, Zengjun</creator><creator>Rozen, John</creator><creator>Feldman, Leonard C.</creator><creator>Williams, John R.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20110301</creationdate><title>The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices</title><author>Zhu, Xingguang ; Ahyi, Ayayi C. ; Li, Mingyu ; Chen, Zengjun ; Rozen, John ; Feldman, Leonard C. ; Williams, John R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c425t-bfe6dbc6ee35f7ce73d5742ad1b0c2d715be21b40b41b0da6fd4ac0220e073653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Breakdown</topic><topic>Channel mobility</topic><topic>Channels</topic><topic>Compound structure devices</topic><topic>Density</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Interface trap density</topic><topic>MOS devices</topic><topic>Oxide interface</topic><topic>Oxides</topic><topic>Plasma nitridation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Xingguang</creatorcontrib><creatorcontrib>Ahyi, Ayayi C.</creatorcontrib><creatorcontrib>Li, Mingyu</creatorcontrib><creatorcontrib>Chen, Zengjun</creatorcontrib><creatorcontrib>Rozen, John</creatorcontrib><creatorcontrib>Feldman, Leonard C.</creatorcontrib><creatorcontrib>Williams, John R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Xingguang</au><au>Ahyi, Ayayi C.</au><au>Li, Mingyu</au><au>Chen, Zengjun</au><au>Rozen, John</au><au>Feldman, Leonard C.</au><au>Williams, John R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices</atitle><jtitle>Solid-state electronics</jtitle><date>2011-03-01</date><risdate>2011</risdate><volume>57</volume><issue>1</issue><spage>76</spage><epage>79</epage><pages>76-79</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>► Use a nitrogen plasma to successfully introduce nitrogen into SiO
2/SiC interface. ► N Conc. at the interface is 1
×
10
14
cm
−2, ∼1/6 of the saturated N Conc. by NO anneal. ► This process reduces
D
IT and results in peak channel mobility at about 50
cm
2/V
s.
We report results on the introduction of nitrogen at the SiC/SiO
2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an ‘NO-like’ mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2010.12.002</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Solid-state electronics, 2011-03, Vol.57 (1), p.76-79 |
| issn | 0038-1101 1879-2405 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Annealing Applied sciences Breakdown Channel mobility Channels Compound structure devices Density Electronics Exact sciences and technology Interface trap density MOS devices Oxide interface Oxides Plasma nitridation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide |
| title | The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices |
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