Improvements on radiation-hardened performance of static induction transistor

The radiation-hardened performances of static induction transistor （SIT） have been studied in depth in this paper. The effects of radiation of electron beam on the I-V characteristics, carrier distribution and potential distribution in the channel of SIT have been represented. A large number of elec...

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Veröffentlicht in:	Science China. Information sciences 2010-05, Vol.53 (5), p.1089-1096
Hauptverfasser:	Wang, YongShun, Luo, XianLiang, Li, HaiRong, Wang, ZiTing, Wu, Rong, Zhang, CaiZhen, Li, SiYuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels China Computer Science Current voltage characteristics Depletion Drains Electron beams Gates Holes (electron deficiencies) Information Systems and Communication Service Optimization P-n junctions Potential barriers Radiation Radiation effects Radiation hardening Research Papers Semiconductor devices Thickness Transistors 势垒高度匹配关系反向偏置抗辐射性能抗辐射能力电子空穴对辐射效应静电感应晶体管
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