Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions
Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples...
Gespeichert in:
| Veröffentlicht in: | Journal of luminescence 2011-05, Vol.131 (5), p.1066-1069 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1069 |
|---|---|
| container_issue | 5 |
| container_start_page | 1066 |
| container_title | Journal of luminescence |
| container_volume | 131 |
| creator | Fukuda, Masatoshi Fujii, Minoru Hayashi, Shinji |
| description | Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples exhibited PL below the band gap energy of bulk Si crystal at room temperature. The low-energy PL is considered to arise from the transitions between donor and acceptor states in compensated Si-ncs. The successful formation of narrow size distribution co-doped Si nanocrystals promotes the study of the optical properties of compensated Si nanocrystals.
► P and B co-doped Si nanocrystals (Si-ncs) with narrow size distribution are produced. ► The co-doped and compensated Si-ncs exhibit PL below bulk Si band gap at room temperature. ► The low-energy PL may arise from donor to acceptor transitions in compensated Si-ncs. |
| doi_str_mv | 10.1016/j.jlumin.2011.01.023 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_869835883</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022231311000287</els_id><sourcerecordid>869835883</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-fd2e67c3cfb2e9b44bed13c4db5e1ecc2e84a48dc582552651e24795484e486a3</originalsourceid><addsrcrecordid>eNp9kMuKFTEQhoMoeBx9AxfZiKs-k1v3SW8EHbwMDChe1iFdqXZy7E7aJO0wPoTPbHrO4FIoKKr46v-pn5DnnO054935cX-c1tmHvWCc71ktIR-QHdcH0Ry0lg_JjjEhGiG5fEye5HxkjMle9zvy53OMc1NwXjDZsiakA07xhg7r9KP54ulgg6Pf7UKX61jinQtmwABIxxRn-oluwBsKsXFxQXc3QqxyIdtS56oRbIiQbnOxU6Y3vlzXTUrVJPvfSJ3PJflhLT6G_JQ8GiuFz-77Gfn27u3Xiw_N1cf3lxevrxqQnS7N6AR2B5AwDgL7QakBHZeg3NAiRwCBWlmlHbRatK3oWo5CHfpWaYVKd1aekZcn3SXFnyvmYmZf35omGzCu2eiu17Kt0VVSnUhIMeeEo1mSn226NZyZLX1zNKf0zZa-YbXEdvbi3sBmsNOYbACf_90KxSRrNa_cqxOH9dtfHpPJ4Ld4nU8Ixbjo_2_0F5tLoCo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>869835883</pqid></control><display><type>article</type><title>Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Fukuda, Masatoshi ; Fujii, Minoru ; Hayashi, Shinji</creator><creatorcontrib>Fukuda, Masatoshi ; Fujii, Minoru ; Hayashi, Shinji</creatorcontrib><description>Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples exhibited PL below the band gap energy of bulk Si crystal at room temperature. The low-energy PL is considered to arise from the transitions between donor and acceptor states in compensated Si-ncs. The successful formation of narrow size distribution co-doped Si nanocrystals promotes the study of the optical properties of compensated Si nanocrystals.
► P and B co-doped Si nanocrystals (Si-ncs) with narrow size distribution are produced. ► The co-doped and compensated Si-ncs exhibit PL below bulk Si band gap at room temperature. ► The low-energy PL may arise from donor to acceptor transitions in compensated Si-ncs.</description><identifier>ISSN: 0022-2313</identifier><identifier>EISSN: 1872-7883</identifier><identifier>DOI: 10.1016/j.jlumin.2011.01.023</identifier><identifier>CODEN: JLUMA8</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Boron ; Co-doping ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross sections ; Energy gap ; Exact sciences and technology ; Luminescence ; Multi-layer ; Nanocrystals ; Nanocrystals and nanoparticles ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Phosphorus ; Photoluminescence ; Physics ; Silicon ; Silicon nanocrystal ; Size distribution ; Thin films</subject><ispartof>Journal of luminescence, 2011-05, Vol.131 (5), p.1066-1069</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-fd2e67c3cfb2e9b44bed13c4db5e1ecc2e84a48dc582552651e24795484e486a3</citedby><cites>FETCH-LOGICAL-c368t-fd2e67c3cfb2e9b44bed13c4db5e1ecc2e84a48dc582552651e24795484e486a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jlumin.2011.01.023$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24030581$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Fukuda, Masatoshi</creatorcontrib><creatorcontrib>Fujii, Minoru</creatorcontrib><creatorcontrib>Hayashi, Shinji</creatorcontrib><title>Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions</title><title>Journal of luminescence</title><description>Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples exhibited PL below the band gap energy of bulk Si crystal at room temperature. The low-energy PL is considered to arise from the transitions between donor and acceptor states in compensated Si-ncs. The successful formation of narrow size distribution co-doped Si nanocrystals promotes the study of the optical properties of compensated Si nanocrystals.
► P and B co-doped Si nanocrystals (Si-ncs) with narrow size distribution are produced. ► The co-doped and compensated Si-ncs exhibit PL below bulk Si band gap at room temperature. ► The low-energy PL may arise from donor to acceptor transitions in compensated Si-ncs.</description><subject>Boron</subject><subject>Co-doping</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross sections</subject><subject>Energy gap</subject><subject>Exact sciences and technology</subject><subject>Luminescence</subject><subject>Multi-layer</subject><subject>Nanocrystals</subject><subject>Nanocrystals and nanoparticles</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Phosphorus</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Silicon</subject><subject>Silicon nanocrystal</subject><subject>Size distribution</subject><subject>Thin films</subject><issn>0022-2313</issn><issn>1872-7883</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMuKFTEQhoMoeBx9AxfZiKs-k1v3SW8EHbwMDChe1iFdqXZy7E7aJO0wPoTPbHrO4FIoKKr46v-pn5DnnO054935cX-c1tmHvWCc71ktIR-QHdcH0Ry0lg_JjjEhGiG5fEye5HxkjMle9zvy53OMc1NwXjDZsiakA07xhg7r9KP54ulgg6Pf7UKX61jinQtmwABIxxRn-oluwBsKsXFxQXc3QqxyIdtS56oRbIiQbnOxU6Y3vlzXTUrVJPvfSJ3PJflhLT6G_JQ8GiuFz-77Gfn27u3Xiw_N1cf3lxevrxqQnS7N6AR2B5AwDgL7QakBHZeg3NAiRwCBWlmlHbRatK3oWo5CHfpWaYVKd1aekZcn3SXFnyvmYmZf35omGzCu2eiu17Kt0VVSnUhIMeeEo1mSn226NZyZLX1zNKf0zZa-YbXEdvbi3sBmsNOYbACf_90KxSRrNa_cqxOH9dtfHpPJ4Ld4nU8Ixbjo_2_0F5tLoCo</recordid><startdate>20110501</startdate><enddate>20110501</enddate><creator>Fukuda, Masatoshi</creator><creator>Fujii, Minoru</creator><creator>Hayashi, Shinji</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110501</creationdate><title>Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions</title><author>Fukuda, Masatoshi ; Fujii, Minoru ; Hayashi, Shinji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-fd2e67c3cfb2e9b44bed13c4db5e1ecc2e84a48dc582552651e24795484e486a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Boron</topic><topic>Co-doping</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross sections</topic><topic>Energy gap</topic><topic>Exact sciences and technology</topic><topic>Luminescence</topic><topic>Multi-layer</topic><topic>Nanocrystals</topic><topic>Nanocrystals and nanoparticles</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Phosphorus</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Silicon</topic><topic>Silicon nanocrystal</topic><topic>Size distribution</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fukuda, Masatoshi</creatorcontrib><creatorcontrib>Fujii, Minoru</creatorcontrib><creatorcontrib>Hayashi, Shinji</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fukuda, Masatoshi</au><au>Fujii, Minoru</au><au>Hayashi, Shinji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions</atitle><jtitle>Journal of luminescence</jtitle><date>2011-05-01</date><risdate>2011</risdate><volume>131</volume><issue>5</issue><spage>1066</spage><epage>1069</epage><pages>1066-1069</pages><issn>0022-2313</issn><eissn>1872-7883</eissn><coden>JLUMA8</coden><abstract>Thin films consisting of the layers of phosphorus (P) and boron (B) co-doped Si nanocrystals (Si-ncs) and glass spacer layers were prepared and their photoluminescence properties were studied. Cross-sectional TEM observations revealed the growth of Si-ncs with narrow size distributions. The samples exhibited PL below the band gap energy of bulk Si crystal at room temperature. The low-energy PL is considered to arise from the transitions between donor and acceptor states in compensated Si-ncs. The successful formation of narrow size distribution co-doped Si nanocrystals promotes the study of the optical properties of compensated Si nanocrystals.
► P and B co-doped Si nanocrystals (Si-ncs) with narrow size distribution are produced. ► The co-doped and compensated Si-ncs exhibit PL below bulk Si band gap at room temperature. ► The low-energy PL may arise from donor to acceptor transitions in compensated Si-ncs.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jlumin.2011.01.023</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-2313 |
| ispartof | Journal of luminescence, 2011-05, Vol.131 (5), p.1066-1069 |
| issn | 0022-2313 1872-7883 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_869835883 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Boron Co-doping Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross sections Energy gap Exact sciences and technology Luminescence Multi-layer Nanocrystals Nanocrystals and nanoparticles Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Phosphorus Photoluminescence Physics Silicon Silicon nanocrystal Size distribution Thin films |
| title | Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T22%3A43%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-temperature%20below%20bulk-Si%20band%20gap%20photoluminescence%20from%20P%20and%20B%20co-doped%20and%20compensated%20Si%20nanocrystals%20with%20narrow%20size%20distributions&rft.jtitle=Journal%20of%20luminescence&rft.au=Fukuda,%20Masatoshi&rft.date=2011-05-01&rft.volume=131&rft.issue=5&rft.spage=1066&rft.epage=1069&rft.pages=1066-1069&rft.issn=0022-2313&rft.eissn=1872-7883&rft.coden=JLUMA8&rft_id=info:doi/10.1016/j.jlumin.2011.01.023&rft_dat=%3Cproquest_cross%3E869835883%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=869835883&rft_id=info:pmid/&rft_els_id=S0022231311000287&rfr_iscdi=true |