Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method

► ZnO:Ga thin films are prepared by DC reactive magnetron sputtering. ► The Taguchi method is applied to find the optimal growth conditions. ► ZnO:Ga films have acceptable structural, electrical, and optical properties. Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass subst...

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Veröffentlicht in:Applied surface science 2011-05, Vol.257 (14), p.6125-6128
Hauptverfasser: Bie, Xun, Lu, Jianguo, Wang, Yuping, Gong, Li, Ma, Quanbao, Ye, Zhizhen
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Sprache:eng
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