The effective surface Debye temperature of Yb:GaN
The effective Debye temperature of ytterbium and gallium in Yb:GaN thin films has been obtained using X-ray photoemission spectroscopy. The vibrational motion normal to the surface results in a dimunition of photoemission intensities from which we have estimated the effective Debye temperatures of 2...
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| Veröffentlicht in: | Materials letters 2011-05, Vol.65 (10), p.1476-1478 |
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| container_title | Materials letters |
| container_volume | 65 |
| creator | McHale, S.R. McClory, J.W. Petrosky, J.C. Wu, J. Palai, R. Dowben, P.A. Ketsman, I. |
| description | The effective Debye temperature of ytterbium and gallium in Yb:GaN thin films has been obtained using X-ray photoemission spectroscopy. The vibrational motion normal to the surface results in a dimunition of photoemission intensities from which we have estimated the effective Debye temperatures of 221
±
30
K and 308
±
30
K for Yb and Ga, respectively. The difference between the measured values for Yb and Ga suggests that the Debye temperatures are influenced by the local environment. The smaller effective surface Debye temperature for Yb correlates to a soft, strained surface, possibly due to an increased Yb―N bond length as compared to the Ga―N bond length. |
| doi_str_mv | 10.1016/j.matlet.2011.02.042 |
| format | Article |
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±
30
K and 308
±
30
K for Yb and Ga, respectively. The difference between the measured values for Yb and Ga suggests that the Debye temperatures are influenced by the local environment. The smaller effective surface Debye temperature for Yb correlates to a soft, strained surface, possibly due to an increased Yb―N bond length as compared to the Ga―N bond length.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2011.02.042</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>BONDING ; Correlation ; DEBYE TEMPERATURE ; Effective surface Debye temperature ; Gallium ; GaN thin films ; Photoelectron spectroscopy ; Photoemission ; spectroscopy ; SUPERCONDUCTORS ; temperature ; THIN FILMS ; X RAYS ; X-radiation ; Ytterbium ; Ytterbium doping ; YTTRIUM OXIDE</subject><ispartof>Materials letters, 2011-05, Vol.65 (10), p.1476-1478</ispartof><rights>2011</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-8a7ada49cd625a95ea68c5487bd35d12b544b3e467b8b2311fb0a210d3e844293</citedby><cites>FETCH-LOGICAL-c408t-8a7ada49cd625a95ea68c5487bd35d12b544b3e467b8b2311fb0a210d3e844293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2011.02.042$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>McHale, S.R.</creatorcontrib><creatorcontrib>McClory, J.W.</creatorcontrib><creatorcontrib>Petrosky, J.C.</creatorcontrib><creatorcontrib>Wu, J.</creatorcontrib><creatorcontrib>Palai, R.</creatorcontrib><creatorcontrib>Dowben, P.A.</creatorcontrib><creatorcontrib>Ketsman, I.</creatorcontrib><title>The effective surface Debye temperature of Yb:GaN</title><title>Materials letters</title><description>The effective Debye temperature of ytterbium and gallium in Yb:GaN thin films has been obtained using X-ray photoemission spectroscopy. The vibrational motion normal to the surface results in a dimunition of photoemission intensities from which we have estimated the effective Debye temperatures of 221
±
30
K and 308
±
30
K for Yb and Ga, respectively. The difference between the measured values for Yb and Ga suggests that the Debye temperatures are influenced by the local environment. The smaller effective surface Debye temperature for Yb correlates to a soft, strained surface, possibly due to an increased Yb―N bond length as compared to the Ga―N bond length.</description><subject>BONDING</subject><subject>Correlation</subject><subject>DEBYE TEMPERATURE</subject><subject>Effective surface Debye temperature</subject><subject>Gallium</subject><subject>GaN thin films</subject><subject>Photoelectron spectroscopy</subject><subject>Photoemission</subject><subject>spectroscopy</subject><subject>SUPERCONDUCTORS</subject><subject>temperature</subject><subject>THIN FILMS</subject><subject>X RAYS</subject><subject>X-radiation</subject><subject>Ytterbium</subject><subject>Ytterbium doping</subject><subject>YTTRIUM OXIDE</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kM9LwzAYhoMoOKf_gWBvnlrzq03qQZCpUxh6cAM9hST9qhntOpN2sP_ejHr29F6e9_t4H4QuCc4IJsXNOmt130CfUUxIhmmGOT1CEyIFS3kpymM0iZhIcyE-TtFZCGuMMS8xnyCy_IYE6hps73aQhMHX2kLyAGYPSQ_tFrzuBw9JVyef5nauX8_RSa2bABd_OUWrp8fl7DldvM1fZveL1HIs-1RqoSvNS1sVNNdlDrqQNudSmIrlFaEm59ww4IUw0lBGSG2wpgRXDCTntGRTdD3e3fruZ4DQq9YFC02jN9ANQcmilIznWEaSj6T1XQgearX1rtV-rwhWB0FqrUZB6iBIYaqioFi7Gmu17pT-8i6o1XsE8iiHYcF4JO5GAuLOnQOvgnWwsVA5H4WpqnP_v_gF91l4PA</recordid><startdate>20110531</startdate><enddate>20110531</enddate><creator>McHale, S.R.</creator><creator>McClory, J.W.</creator><creator>Petrosky, J.C.</creator><creator>Wu, J.</creator><creator>Palai, R.</creator><creator>Dowben, P.A.</creator><creator>Ketsman, I.</creator><general>Elsevier B.V</general><scope>FBQ</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope></search><sort><creationdate>20110531</creationdate><title>The effective surface Debye temperature of Yb:GaN</title><author>McHale, S.R. ; McClory, J.W. ; Petrosky, J.C. ; Wu, J. ; Palai, R. ; Dowben, P.A. ; Ketsman, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-8a7ada49cd625a95ea68c5487bd35d12b544b3e467b8b2311fb0a210d3e844293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BONDING</topic><topic>Correlation</topic><topic>DEBYE TEMPERATURE</topic><topic>Effective surface Debye temperature</topic><topic>Gallium</topic><topic>GaN thin films</topic><topic>Photoelectron spectroscopy</topic><topic>Photoemission</topic><topic>spectroscopy</topic><topic>SUPERCONDUCTORS</topic><topic>temperature</topic><topic>THIN FILMS</topic><topic>X RAYS</topic><topic>X-radiation</topic><topic>Ytterbium</topic><topic>Ytterbium doping</topic><topic>YTTRIUM OXIDE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>McHale, S.R.</creatorcontrib><creatorcontrib>McClory, J.W.</creatorcontrib><creatorcontrib>Petrosky, J.C.</creatorcontrib><creatorcontrib>Wu, J.</creatorcontrib><creatorcontrib>Palai, R.</creatorcontrib><creatorcontrib>Dowben, P.A.</creatorcontrib><creatorcontrib>Ketsman, I.</creatorcontrib><collection>AGRIS</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>McHale, S.R.</au><au>McClory, J.W.</au><au>Petrosky, J.C.</au><au>Wu, J.</au><au>Palai, R.</au><au>Dowben, P.A.</au><au>Ketsman, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effective surface Debye temperature of Yb:GaN</atitle><jtitle>Materials letters</jtitle><date>2011-05-31</date><risdate>2011</risdate><volume>65</volume><issue>10</issue><spage>1476</spage><epage>1478</epage><pages>1476-1478</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>The effective Debye temperature of ytterbium and gallium in Yb:GaN thin films has been obtained using X-ray photoemission spectroscopy. The vibrational motion normal to the surface results in a dimunition of photoemission intensities from which we have estimated the effective Debye temperatures of 221
±
30
K and 308
±
30
K for Yb and Ga, respectively. The difference between the measured values for Yb and Ga suggests that the Debye temperatures are influenced by the local environment. The smaller effective surface Debye temperature for Yb correlates to a soft, strained surface, possibly due to an increased Yb―N bond length as compared to the Ga―N bond length.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2011.02.042</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Materials letters, 2011-05, Vol.65 (10), p.1476-1478 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | BONDING Correlation DEBYE TEMPERATURE Effective surface Debye temperature Gallium GaN thin films Photoelectron spectroscopy Photoemission spectroscopy SUPERCONDUCTORS temperature THIN FILMS X RAYS X-radiation Ytterbium Ytterbium doping YTTRIUM OXIDE |
| title | The effective surface Debye temperature of Yb:GaN |
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