Periodic current oscillations observed in organic MIM junctions
We reported here the fabrication of an all-organic transistor built with metal–insulator–metal (MIM) junctions and its preliminary results. These planar samples consist basically of three interconnected tunnel junctions each one formed by an insulating film of poly(methyl methacrylate) (PMMA) sandwi...
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Veröffentlicht in: | Journal of materials science 2010-09, Vol.45 (18), p.4986-4989 |
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creator | Dos Santos, M. P. Bonfim, T. S. Guimarães, J. G. Ceschin, A. M. |
description | We reported here the fabrication of an all-organic transistor built with metal–insulator–metal (MIM) junctions and its preliminary results. These planar samples consist basically of three interconnected tunnel junctions each one formed by an insulating film of poly(methyl methacrylate) (PMMA) sandwiched between two electrodes of polyethylene dioxythiophene/polystyrene sulfonate (PEDOT/PSS) assembled on a polyester flexible substrate. Electrical measurements were taken at room temperature, with a Keithley 2400 programmable semiconductor measuring system. The junctions presented individual capacitances of 1.40 pF. We observed an oscillatory variation of the drain current with the gate voltage. All associated capacitances were calculated for characterizing the transistor and the bottom electrode material. |
doi_str_mv | 10.1007/s10853-009-4197-x |
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M.</creatorcontrib><title>Periodic current oscillations observed in organic MIM junctions</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>We reported here the fabrication of an all-organic transistor built with metal–insulator–metal (MIM) junctions and its preliminary results. These planar samples consist basically of three interconnected tunnel junctions each one formed by an insulating film of poly(methyl methacrylate) (PMMA) sandwiched between two electrodes of polyethylene dioxythiophene/polystyrene sulfonate (PEDOT/PSS) assembled on a polyester flexible substrate. Electrical measurements were taken at room temperature, with a Keithley 2400 programmable semiconductor measuring system. The junctions presented individual capacitances of 1.40 pF. We observed an oscillatory variation of the drain current with the gate voltage. All associated capacitances were calculated for characterizing the transistor and the bottom electrode material.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Crystallography and Scattering Methods</subject><subject>Electrical junctions</subject><subject>Electrical measurement</subject><subject>Electrode materials</subject><subject>Electrodes</subject><subject>Icam 2009</subject><subject>Materials Science</subject><subject>Polyethylenes</subject><subject>Polymer Sciences</subject><subject>Polymethyl methacrylate</subject><subject>Polymethyl methacrylates</subject><subject>Polymethylmethacrylate</subject><subject>Polystyrene resins</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Solid Mechanics</subject><subject>Substrates</subject><subject>Sulfonates</subject><subject>Transistors</subject><subject>Tunnel junctions</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp10U1LwzAcBvAgCs7pB_BW8CAeOv9JmjY9yRBfBhPFl3PI0mRkbMlMWpnf3swKMkFyCITfEx54EDrFMMIA1WXEwBnNAeq8wHWVb_bQALOK5gUHuo8GAITkpCjxITqKcQEArCJ4gK6edLC-sSpTXQjatZmPyi6XsrXexczPog4fusmsy3yYS5fgw-QhW3ROfYtjdGDkMuqTn3uI3m5vXq_v8-nj3eR6PM0VrWibY2mo4obwyvBGSWkaLImqqTGczYjBlYYGlMFGaWoUMTNCeUmxbNSMAmOEDtF5_-86-PdOx1asbFQ6FXXad1Hwsua0KGiR5NkfufBdcKmcIITVZUlKAkmNejWXSy2sM74NUqXT6JVV3mlj0_uYlgwqXGCWAhc7gWRavWnnsotRTF6edy3urQo-xqCNWAe7kuFTYBDbuUQ_l0hzie1cYpMypM_EZN1ch9_a_4e-ANiQl4o</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Dos Santos, M. 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Electrical measurements were taken at room temperature, with a Keithley 2400 programmable semiconductor measuring system. The junctions presented individual capacitances of 1.40 pF. We observed an oscillatory variation of the drain current with the gate voltage. All associated capacitances were calculated for characterizing the transistor and the bottom electrode material.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10853-009-4197-x</doi><tpages>4</tpages></addata></record> |
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subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystallography and Scattering Methods Electrical junctions Electrical measurement Electrode materials Electrodes Icam 2009 Materials Science Polyethylenes Polymer Sciences Polymethyl methacrylate Polymethyl methacrylates Polymethylmethacrylate Polystyrene resins Semiconductor devices Semiconductors Solid Mechanics Substrates Sulfonates Transistors Tunnel junctions |
title | Periodic current oscillations observed in organic MIM junctions |
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