Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs
It is well known that, in a halo-implanted metal-oxide-semiconductor field-effect transistor, the application of the drain voltage lowers the threshold voltage even in a long-channel device. This phenomenon is known as the long-channel drain-induced barrier lowering (LDIBL) or the drain-induced thre...
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| Veröffentlicht in: | IEEE transactions on electron devices 2011-04, Vol.58 (4), p.979-984 |
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| container_title | IEEE transactions on electron devices |
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| creator | Roy, A S Mudanai, S P Stettler, M |
| description | It is well known that, in a halo-implanted metal-oxide-semiconductor field-effect transistor, the application of the drain voltage lowers the threshold voltage even in a long-channel device. This phenomenon is known as the long-channel drain-induced barrier lowering (LDIBL) or the drain-induced threshold-voltage shift (DITS). In this paper, we will investigate the physical origin of this effect and will show that the root cause has not been previously identified properly. We will identify the physical phenomenon behind the LDIBL/DITS and present an analytic model. The proposed approach is validated against both the device simulation and measurement. |
| doi_str_mv | 10.1109/TED.2011.2109387 |
| format | Article |
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This phenomenon is known as the long-channel drain-induced barrier lowering (LDIBL) or the drain-induced threshold-voltage shift (DITS). In this paper, we will investigate the physical origin of this effect and will show that the root cause has not been previously identified properly. We will identify the physical phenomenon behind the LDIBL/DITS and present an analytic model. The proposed approach is validated against both the device simulation and measurement.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2109387</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical models ; Applied sciences ; Barriers ; Devices ; DIBL ; Doping ; Drains ; Electric potential ; Electronics ; Equations ; Exact sciences and technology ; Halo implant ; Halos ; Mathematical analysis ; MOSFET ; MOSFETs ; Origins ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor process modeling ; Threshold voltage ; Transistors ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.979-984</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c418t-7428816eb6c36c62f10388cab8d1708e349a21d4c7d77ebb34de99ab24e07dae3</citedby><cites>FETCH-LOGICAL-c418t-7428816eb6c36c62f10388cab8d1708e349a21d4c7d77ebb34de99ab24e07dae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5720299$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5720299$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24041836$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Roy, A S</creatorcontrib><creatorcontrib>Mudanai, S P</creatorcontrib><creatorcontrib>Stettler, M</creatorcontrib><title>Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>It is well known that, in a halo-implanted metal-oxide-semiconductor field-effect transistor, the application of the drain voltage lowers the threshold voltage even in a long-channel device. This phenomenon is known as the long-channel drain-induced barrier lowering (LDIBL) or the drain-induced threshold-voltage shift (DITS). In this paper, we will investigate the physical origin of this effect and will show that the root cause has not been previously identified properly. We will identify the physical phenomenon behind the LDIBL/DITS and present an analytic model. The proposed approach is validated against both the device simulation and measurement.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Barriers</subject><subject>Devices</subject><subject>DIBL</subject><subject>Doping</subject><subject>Drains</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>Halo implant</subject><subject>Halos</subject><subject>Mathematical analysis</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Origins</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor process modeling</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1LAzEQxYMoWKt3wcsiiKet-dp8HLWtVqh4UM8hm52tKdtsTVrE_96UFg-ehjfze8PMQ-iS4BEhWN-9TycjigkZ0ayYkkdoQKpKllpwcYwGGBNV5j47RWcpLbMUnNMBmr2A-7TBp1XRt8W8D4tynHWArphE60P5HJqtg6Z4sDF6iBn5hujDovChmNmuL15e3x6n7-kcnbS2S3BxqEP0kdvjWTl_fXoe389Lx4nalJJTpYiAWjgmnKAtwUwpZ2vVEIkVMK4tJQ13spES6prxBrS2NeWAZWOBDdHtfu869l9bSBuz8slB19kA_TYZJbRimAqZyet_5LLfxpCPM6pSBEulqwzhPeRin1KE1qyjX9n4Ywg2u2BNDtbsgjWHYLPl5rDXJme7NtrgfPrzUY7zp0xk7mrPeQD4G1eSYqo1-wWaEX6U</recordid><startdate>20110401</startdate><enddate>20110401</enddate><creator>Roy, A S</creator><creator>Mudanai, S P</creator><creator>Stettler, M</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20110401</creationdate><title>Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs</title><author>Roy, A S ; Mudanai, S P ; Stettler, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c418t-7428816eb6c36c62f10388cab8d1708e349a21d4c7d77ebb34de99ab24e07dae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Analytical models</topic><topic>Applied sciences</topic><topic>Barriers</topic><topic>Devices</topic><topic>DIBL</topic><topic>Doping</topic><topic>Drains</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Equations</topic><topic>Exact sciences and technology</topic><topic>Halo implant</topic><topic>Halos</topic><topic>Mathematical analysis</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Origins</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor process modeling</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roy, A S</creatorcontrib><creatorcontrib>Mudanai, S P</creatorcontrib><creatorcontrib>Stettler, M</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Roy, A S</au><au>Mudanai, S P</au><au>Stettler, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-04-01</date><risdate>2011</risdate><volume>58</volume><issue>4</issue><spage>979</spage><epage>984</epage><pages>979-984</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>It is well known that, in a halo-implanted metal-oxide-semiconductor field-effect transistor, the application of the drain voltage lowers the threshold voltage even in a long-channel device. This phenomenon is known as the long-channel drain-induced barrier lowering (LDIBL) or the drain-induced threshold-voltage shift (DITS). In this paper, we will investigate the physical origin of this effect and will show that the root cause has not been previously identified properly. We will identify the physical phenomenon behind the LDIBL/DITS and present an analytic model. The proposed approach is validated against both the device simulation and measurement.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2109387</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.979-984 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Barriers Devices DIBL Doping Drains Electric potential Electronics Equations Exact sciences and technology Halo implant Halos Mathematical analysis MOSFET MOSFETs Origins Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Threshold voltage Transistors Voltage |
| title | Mechanism of Long-Channel Drain-Induced Barrier Lowering in Halo MOSFETs |
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