Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films

► Sputtering technique has been used for the deposition of AgGaSe2 thin films. ► There was a pronounce effect of post-annealing on chemical composition of samples. ► Mono phase AgGaSe2 was obtained at 600°C annealing temperature. ► Band gap values were found to be varying between 1.55 and 1.77eV. ►...

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Veröffentlicht in:	Applied surface science 2011-04, Vol.257 (13), p.5731-5738
Hauptverfasser:	Karaagac, H., Parlak, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	AgGaSe2 Annealing Chalcopyrite compounds Chemical composition Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Exact sciences and technology Photoresponse Physics Scanning electron microscopy Silver Splitting Sputtering Thin films Transmission–reflection X-ray diffraction X-rays
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