Characterization of DC reactive magnetron sputtered NiO films using spectroscopic ellipsometry

► Ni-rich NiO films and relatively pure NiO film were prepared by magnetron sputtering. ► The partial pressure of oxygen is a key condition for growing NiO films. ► Optical properties of the NiO films were investigated by spectroscopic ellipsometry. ► The partial pressure of oxygen influences the th...

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Veröffentlicht in:Applied surface science 2011-04, Vol.257 (13), p.5908-5912
Hauptverfasser: Peng, T.C., Xiao, X.H., Han, X.Y., Zhou, X.D., Wu, W., Ren, F., Jiang, C.Z.
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container_end_page 5912
container_issue 13
container_start_page 5908
container_title Applied surface science
container_volume 257
creator Peng, T.C.
Xiao, X.H.
Han, X.Y.
Zhou, X.D.
Wu, W.
Ren, F.
Jiang, C.Z.
description ► Ni-rich NiO films and relatively pure NiO film were prepared by magnetron sputtering. ► The partial pressure of oxygen is a key condition for growing NiO films. ► Optical properties of the NiO films were investigated by spectroscopic ellipsometry. ► The partial pressure of oxygen influences the thickness and roughness of NiO films. ► Direct gap energy and indirect gap energy of the NiO films are also influenced. Thin NiO films were deposited at 500°C on n-type Si(111) by a DC reactive magnetron sputtering in a gas mixture of oxygen and argon. The ratio between the flow rates of oxygen and argon was respectively set at 1:4, 1:2, and 1:1. The dependence of structures and optical properties of NiO films were investigated using grazing incidence X-ray diffraction and spectroscopic ellipsometry in the spectral region of 1.5–5.0eV. Ni-rich NiO films were obtained when the ratio between the flow rates of oxygen and argon was 1:4 and 1:2 in sputtering process. And when the ratio was 1:1, a relatively pure NiO film was formed. The partial pressure of oxygen could significantly influence the thickness and roughness of films. Refractive index n, extinction coefficient k, and direct gap energy and indirect gap energy of the NiO films were also subject to the influence of the partial pressure of oxygen.
doi_str_mv 10.1016/j.apsusc.2011.01.138
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Thin NiO films were deposited at 500°C on n-type Si(111) by a DC reactive magnetron sputtering in a gas mixture of oxygen and argon. The ratio between the flow rates of oxygen and argon was respectively set at 1:4, 1:2, and 1:1. The dependence of structures and optical properties of NiO films were investigated using grazing incidence X-ray diffraction and spectroscopic ellipsometry in the spectral region of 1.5–5.0eV. Ni-rich NiO films were obtained when the ratio between the flow rates of oxygen and argon was 1:4 and 1:2 in sputtering process. And when the ratio was 1:1, a relatively pure NiO film was formed. The partial pressure of oxygen could significantly influence the thickness and roughness of films. 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Thin NiO films were deposited at 500°C on n-type Si(111) by a DC reactive magnetron sputtering in a gas mixture of oxygen and argon. The ratio between the flow rates of oxygen and argon was respectively set at 1:4, 1:2, and 1:1. The dependence of structures and optical properties of NiO films were investigated using grazing incidence X-ray diffraction and spectroscopic ellipsometry in the spectral region of 1.5–5.0eV. Ni-rich NiO films were obtained when the ratio between the flow rates of oxygen and argon was 1:4 and 1:2 in sputtering process. And when the ratio was 1:1, a relatively pure NiO film was formed. The partial pressure of oxygen could significantly influence the thickness and roughness of films. Refractive index n, extinction coefficient k, and direct gap energy and indirect gap energy of the NiO films were also subject to the influence of the partial pressure of oxygen.</description><subject>Argon</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Direct current</subject><subject>Ellipsometry</subject><subject>Energy gap</subject><subject>Exact sciences and technology</subject><subject>Magnetron sputtering</subject><subject>NiO films</subject><subject>Partial pressure</subject><subject>Physics</subject><subject>Roughness</subject><subject>Spectroscopic ellipsometry</subject><subject>Spectroscopy</subject><subject>Tauc–Lorentz dispersion function</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kEtr3TAQhUVIIDdJ_0EX3pSs7Gos-bUphNs0KYRmk2wrlPH4Vhe_qrED6a_vhHvpsiAY0PnOPI5SH0FnoKH8vM_8zCtjlmuATEMGpj5RG6grkxZFbU_VRrAmtcbk5-qCea815KJu1M_tLx89LhTDH7-EaUymLvm6TSLJZ3ilZPC7kZYoAs_rIhy1yY_wmHShHzhZOYw7UQgFYZzmgAn1fZh5GsT1dqXOOt8zfTjWS_X87fZpe58-PN593948pGjKekk7tAXotgHAqsKyNPK81wi-MwS2eKmwqn1RARB6o6mh7sW2RdsURtvS1uZSXR_6znH6vRIvbgiMsokfaVrZ1WVTQ95YK6Q9kCgLc6TOzTEMPr450O49Tbd3hzTde5pOg5M0xfbpOMAz-r6LfsTA_7y5aUpoChDuy4EjufY1UHSMgUakNkQJybVT-P-gv4t1jmY</recordid><startdate>20110415</startdate><enddate>20110415</enddate><creator>Peng, T.C.</creator><creator>Xiao, X.H.</creator><creator>Han, X.Y.</creator><creator>Zhou, X.D.</creator><creator>Wu, W.</creator><creator>Ren, F.</creator><creator>Jiang, C.Z.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110415</creationdate><title>Characterization of DC reactive magnetron sputtered NiO films using spectroscopic ellipsometry</title><author>Peng, T.C. ; 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Thin NiO films were deposited at 500°C on n-type Si(111) by a DC reactive magnetron sputtering in a gas mixture of oxygen and argon. The ratio between the flow rates of oxygen and argon was respectively set at 1:4, 1:2, and 1:1. The dependence of structures and optical properties of NiO films were investigated using grazing incidence X-ray diffraction and spectroscopic ellipsometry in the spectral region of 1.5–5.0eV. Ni-rich NiO films were obtained when the ratio between the flow rates of oxygen and argon was 1:4 and 1:2 in sputtering process. And when the ratio was 1:1, a relatively pure NiO film was formed. The partial pressure of oxygen could significantly influence the thickness and roughness of films. Refractive index n, extinction coefficient k, and direct gap energy and indirect gap energy of the NiO films were also subject to the influence of the partial pressure of oxygen.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2011.01.138</doi><tpages>5</tpages></addata></record>
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subjects Argon
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Direct current
Ellipsometry
Energy gap
Exact sciences and technology
Magnetron sputtering
NiO films
Partial pressure
Physics
Roughness
Spectroscopic ellipsometry
Spectroscopy
Tauc–Lorentz dispersion function
title Characterization of DC reactive magnetron sputtered NiO films using spectroscopic ellipsometry
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