Negative EUV Resist Based on Thiol-Ene System
Non-conventional chemically amplified (CA) resist was designed. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on difunctional thiol and poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl or propargyl moiety. Dissolution prope...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2010/06/22, Vol.23(5), pp.687-691 |
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| container_end_page | 691 |
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| container_issue | 5 |
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| container_title | Journal of Photopolymer Science and Technology |
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| creator | Shirai, Masamitsu Maki, Koichi Okamura, Haruyuki Kaneyama, Koji Itani, Toshiro |
| description | Non-conventional chemically amplified (CA) resist was designed. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on difunctional thiol and poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl or propargyl moiety. Dissolution property of the modified-PHS in TMAHaq solution was affected by the modification degree. Resist was prepared by mixing the modified-PHS, difunctional thiol compound, and photoradical generator. Photosensitivity of the resist was studied using 254- and 13.5-nm light. The sensitivity was strongly affected by the modification degree of PHS, molecular weight of PHS, molecular weight distribution of PHS, and amounts of thiol compound and photoradical generator added. Outgassing of the present system was studied by the pressure rise analysis. It was found that the present resist system was highly sensitive to EUV exposure. |
| doi_str_mv | 10.2494/photopolymer.23.687 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_869803334</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3107897871</sourcerecordid><originalsourceid>FETCH-LOGICAL-c568t-b604571fadf22964c0866429ff75e66d3a8f68552fe4a29a14b46cbbc69f86ad3</originalsourceid><addsrcrecordid>eNplkEFLwzAUx4MoOKefwEvBg6fONnnJmqOO6YShoJvXkLYvW0fb1CQT9u2tVET08t7l9_vz3p-QyzSZUJBw021tsJ2tDw26CWUTkU2PyChlIGPBmDgmo0SmEEsKcErOvN8lCWOcyxGJn3CjQ_WB0Xz9Fr2gr3yI7rTHMrJttNpWto7nLUavBx-wOScnRtceL773mKzv56vZIl4-PzzObpdxwUUW4lwkwKep0aWhVAookkwIoNKYKUchSqYzIzLOqUHQVOoUchBFnhdCmkzoko3J9ZDbOfu-Rx9UU_kC61q3aPdeZUJm_QcMevLqD7mze9f2x6kUAARPOcieYgNVOOu9Q6M6VzXaHVSaqK8G1e8GFWWqb7C3FoO180Fv8MfRLlRFjf8cPoxe_UGKrXYKW_YJNLKBBA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1444651549</pqid></control><display><type>article</type><title>Negative EUV Resist Based on Thiol-Ene System</title><source>J-STAGE Free</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Shirai, Masamitsu ; Maki, Koichi ; Okamura, Haruyuki ; Kaneyama, Koji ; Itani, Toshiro</creator><creatorcontrib>Shirai, Masamitsu ; Maki, Koichi ; Okamura, Haruyuki ; Kaneyama, Koji ; Itani, Toshiro</creatorcontrib><description>Non-conventional chemically amplified (CA) resist was designed. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on difunctional thiol and poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl or propargyl moiety. Dissolution property of the modified-PHS in TMAHaq solution was affected by the modification degree. Resist was prepared by mixing the modified-PHS, difunctional thiol compound, and photoradical generator. Photosensitivity of the resist was studied using 254- and 13.5-nm light. The sensitivity was strongly affected by the modification degree of PHS, molecular weight of PHS, molecular weight distribution of PHS, and amounts of thiol compound and photoradical generator added. Outgassing of the present system was studied by the pressure rise analysis. It was found that the present resist system was highly sensitive to EUV exposure.</description><identifier>ISSN: 0914-9244</identifier><identifier>ISSN: 1349-6336</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.23.687</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>Amplification ; Derivatives ; EUV resist ; Generators ; Molecular weight ; Molecular weight distribution ; negative resist ; non-conventional CA resist ; Photosensitivity ; PHS ; Radicals ; Resists ; thiol/ene reaction ; Thiols</subject><ispartof>Journal of Photopolymer Science and Technology, 2010/06/22, Vol.23(5), pp.687-691</ispartof><rights>2010 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2010</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c568t-b604571fadf22964c0866429ff75e66d3a8f68552fe4a29a14b46cbbc69f86ad3</citedby><cites>FETCH-LOGICAL-c568t-b604571fadf22964c0866429ff75e66d3a8f68552fe4a29a14b46cbbc69f86ad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27903,27904</link.rule.ids></links><search><creatorcontrib>Shirai, Masamitsu</creatorcontrib><creatorcontrib>Maki, Koichi</creatorcontrib><creatorcontrib>Okamura, Haruyuki</creatorcontrib><creatorcontrib>Kaneyama, Koji</creatorcontrib><creatorcontrib>Itani, Toshiro</creatorcontrib><title>Negative EUV Resist Based on Thiol-Ene System</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>Non-conventional chemically amplified (CA) resist was designed. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on difunctional thiol and poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl or propargyl moiety. Dissolution property of the modified-PHS in TMAHaq solution was affected by the modification degree. Resist was prepared by mixing the modified-PHS, difunctional thiol compound, and photoradical generator. Photosensitivity of the resist was studied using 254- and 13.5-nm light. The sensitivity was strongly affected by the modification degree of PHS, molecular weight of PHS, molecular weight distribution of PHS, and amounts of thiol compound and photoradical generator added. Outgassing of the present system was studied by the pressure rise analysis. It was found that the present resist system was highly sensitive to EUV exposure.</description><subject>Amplification</subject><subject>Derivatives</subject><subject>EUV resist</subject><subject>Generators</subject><subject>Molecular weight</subject><subject>Molecular weight distribution</subject><subject>negative resist</subject><subject>non-conventional CA resist</subject><subject>Photosensitivity</subject><subject>PHS</subject><subject>Radicals</subject><subject>Resists</subject><subject>thiol/ene reaction</subject><subject>Thiols</subject><issn>0914-9244</issn><issn>1349-6336</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNplkEFLwzAUx4MoOKefwEvBg6fONnnJmqOO6YShoJvXkLYvW0fb1CQT9u2tVET08t7l9_vz3p-QyzSZUJBw021tsJ2tDw26CWUTkU2PyChlIGPBmDgmo0SmEEsKcErOvN8lCWOcyxGJn3CjQ_WB0Xz9Fr2gr3yI7rTHMrJttNpWto7nLUavBx-wOScnRtceL773mKzv56vZIl4-PzzObpdxwUUW4lwkwKep0aWhVAookkwIoNKYKUchSqYzIzLOqUHQVOoUchBFnhdCmkzoko3J9ZDbOfu-Rx9UU_kC61q3aPdeZUJm_QcMevLqD7mze9f2x6kUAARPOcieYgNVOOu9Q6M6VzXaHVSaqK8G1e8GFWWqb7C3FoO180Fv8MfRLlRFjf8cPoxe_UGKrXYKW_YJNLKBBA</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Shirai, Masamitsu</creator><creator>Maki, Koichi</creator><creator>Okamura, Haruyuki</creator><creator>Kaneyama, Koji</creator><creator>Itani, Toshiro</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100101</creationdate><title>Negative EUV Resist Based on Thiol-Ene System</title><author>Shirai, Masamitsu ; Maki, Koichi ; Okamura, Haruyuki ; Kaneyama, Koji ; Itani, Toshiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c568t-b604571fadf22964c0866429ff75e66d3a8f68552fe4a29a14b46cbbc69f86ad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amplification</topic><topic>Derivatives</topic><topic>EUV resist</topic><topic>Generators</topic><topic>Molecular weight</topic><topic>Molecular weight distribution</topic><topic>negative resist</topic><topic>non-conventional CA resist</topic><topic>Photosensitivity</topic><topic>PHS</topic><topic>Radicals</topic><topic>Resists</topic><topic>thiol/ene reaction</topic><topic>Thiols</topic><toplevel>online_resources</toplevel><creatorcontrib>Shirai, Masamitsu</creatorcontrib><creatorcontrib>Maki, Koichi</creatorcontrib><creatorcontrib>Okamura, Haruyuki</creatorcontrib><creatorcontrib>Kaneyama, Koji</creatorcontrib><creatorcontrib>Itani, Toshiro</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shirai, Masamitsu</au><au>Maki, Koichi</au><au>Okamura, Haruyuki</au><au>Kaneyama, Koji</au><au>Itani, Toshiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negative EUV Resist Based on Thiol-Ene System</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2010-01-01</date><risdate>2010</risdate><volume>23</volume><issue>5</issue><spage>687</spage><epage>691</epage><pages>687-691</pages><issn>0914-9244</issn><issn>1349-6336</issn><eissn>1349-6336</eissn><abstract>Non-conventional chemically amplified (CA) resist was designed. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on difunctional thiol and poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl or propargyl moiety. Dissolution property of the modified-PHS in TMAHaq solution was affected by the modification degree. Resist was prepared by mixing the modified-PHS, difunctional thiol compound, and photoradical generator. Photosensitivity of the resist was studied using 254- and 13.5-nm light. The sensitivity was strongly affected by the modification degree of PHS, molecular weight of PHS, molecular weight distribution of PHS, and amounts of thiol compound and photoradical generator added. Outgassing of the present system was studied by the pressure rise analysis. It was found that the present resist system was highly sensitive to EUV exposure.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.23.687</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| source | J-STAGE Free; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Free Full-Text Journals in Chemistry |
| subjects | Amplification Derivatives EUV resist Generators Molecular weight Molecular weight distribution negative resist non-conventional CA resist Photosensitivity PHS Radicals Resists thiol/ene reaction Thiols |
| title | Negative EUV Resist Based on Thiol-Ene System |
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