Modeling of a 6H-SiC MESFET for high-power and high-gain applications

A Monte Carlo simulation has been used to model steady state and transient electron transport in 6H-SiC field effect transistor. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible and the predicted I-V and...

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Veröffentlicht in:	Indian journal of science and technology 2011-01, Vol.4 (1), p.1-3
1. Verfasser:	Arabshahi, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Devices Gain Gates Indian Mathematical models MESFETs Monte Carlo methods Steady state
Online-Zugang:	Volltext
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