Operation of a Raman laser in bulk silicon

A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam b...

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Veröffentlicht in:	Optics letters 2011-05, Vol.36 (9), p.1644-1646
Hauptverfasser:	Rhee, Hanjo, Lux, Oliver, Meister, Stefan, Woggon, Ulrike, Kaminskii, Alexander A, Eichler, Hans Joachim
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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