Operation of a Raman laser in bulk silicon

Operation of a Raman laser in bulk silicon

A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam b...

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Veröffentlicht in:Optics letters 2011-05, Vol.36 (9), p.1644-1646
Hauptverfasser: Rhee, Hanjo, Lux, Oliver, Meister, Stefan, Woggon, Ulrike, Kaminskii, Alexander A, Eichler, Hans Joachim
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container_end_page 1646
container_issue 9
container_start_page 1644
container_title Optics letters
container_volume 36
creator Rhee, Hanjo
Lux, Oliver
Meister, Stefan
Woggon, Ulrike
Kaminskii, Alexander A
Eichler, Hans Joachim
description A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K.
doi_str_mv 10.1364/OL.36.001644
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title Operation of a Raman laser in bulk silicon
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