Metal-assisted etching of p-silicon—Pore formation and characterization

▶ The paper represents a part of active research in the field of materials science. ▶ It specifies the proper conditions to obtain porous silicon layers on Si in the nano structure range for solar energy conversion and optoelectronic applications. Etching of silicon and formation of definite porous...

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Veröffentlicht in:	Journal of alloys and compounds 2011-03, Vol.509 (10), p.4122-4126
Hauptverfasser:	El-Sherif, Rabab M., Khalil, Shaaban A., Badawy, Waheed. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Colloidal state and disperse state Electrochemical impedance spectroscopy Etching Exact sciences and technology General and physical chemistry Impedance Mathematical models Metal-assisted etching Nanostructure Optoelectronics Porous materials Porous silicon Potassium dichromate Scanning electron microscopy Silicon X-ray dispersive spectroscopy
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