The explanation of InN bandgap discrepancy based on experiments and first-principle calculations

Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm...

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Veröffentlicht in:	Physics letters. A 2011-02, Vol.375 (7), p.1152-1155
Hauptverfasser:	Liu, Chaoren, Li, Jingbo
Format:	Artikel
Sprache:	eng
Schlagworte:	Band gap Chemical vapor deposition Defect Expansion First principle calculation Free electrons Gallium nitrides Indium nitride Mathematical analysis Solid state physics Widening
Online-Zugang:	Volltext
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