The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm...
Gespeichert in:
| Veröffentlicht in: | Physics letters. A 2011-02, Vol.375 (7), p.1152-1155 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1155 |
|---|---|
| container_issue | 7 |
| container_start_page | 1152 |
| container_title | Physics letters. A |
| container_volume | 375 |
| creator | Liu, Chaoren Li, Jingbo |
| description | Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm that the widening of InN optical bandgap reported before is caused by high density of free electrons. To find the contributor of the free electrons, the characteristic energetic levels of ON, VN and SiIn are investigated. We find that they are all high enough to uplift the optical bandgap from about 0.78 eV to 1.9 eV, which almost can't be enlarged further when it reaches 2.09 eV. |
| doi_str_mv | 10.1016/j.physleta.2011.01.024 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_864426619</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0375960111000715</els_id><sourcerecordid>864426619</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-ff92dd5be3137c933491af2ea7df0adf005ee2b6210dedff37fca6d9c38ab5463</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoWKt_QXLztGu-NtvclOJHoeilnmM2mdiU7e6abMX-e6PVszDDwPC8LzMvQpeUlJRQeb0ph_U-tTCakhFKS5KLiSM0obOaF0wwdYwmhNdVoSShp-gspQ0hWUnUBL2u1oDhc2hNZ8bQd7j3eNE94cZ07s0M2IVkIwyms_u8S-BwZjIPMWyhGxPOHPYhprEYYuhsGFrA1rR21_74pXN04k2b4OJ3TtHL_d1q_lgsnx8W89tlYbkQY-G9Ys5VDXDKa6s4F4oaz8DUzhOTm1QArJGMEgfOe157a6RTls9MUwnJp-jq4DvE_n0HadTbfDq0-THod0nPpBBMSqoyKQ-kjX1KEbzOl29N3GtK9HeieqP_EtXfiWqSi4ksvDkIIf_xESDqZAN0FlyIYEft-vCfxRd0cYXP</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>864426619</pqid></control><display><type>article</type><title>The explanation of InN bandgap discrepancy based on experiments and first-principle calculations</title><source>Elsevier ScienceDirect Journals</source><creator>Liu, Chaoren ; Li, Jingbo</creator><creatorcontrib>Liu, Chaoren ; Li, Jingbo</creatorcontrib><description>Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm that the widening of InN optical bandgap reported before is caused by high density of free electrons. To find the contributor of the free electrons, the characteristic energetic levels of ON, VN and SiIn are investigated. We find that they are all high enough to uplift the optical bandgap from about 0.78 eV to 1.9 eV, which almost can't be enlarged further when it reaches 2.09 eV.</description><identifier>ISSN: 0375-9601</identifier><identifier>EISSN: 1873-2429</identifier><identifier>DOI: 10.1016/j.physleta.2011.01.024</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Band gap ; Chemical vapor deposition ; Defect ; Expansion ; First principle calculation ; Free electrons ; Gallium nitrides ; Indium nitride ; Mathematical analysis ; Solid state physics ; Widening</subject><ispartof>Physics letters. A, 2011-02, Vol.375 (7), p.1152-1155</ispartof><rights>2011 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-ff92dd5be3137c933491af2ea7df0adf005ee2b6210dedff37fca6d9c38ab5463</citedby><cites>FETCH-LOGICAL-c344t-ff92dd5be3137c933491af2ea7df0adf005ee2b6210dedff37fca6d9c38ab5463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0375960111000715$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Liu, Chaoren</creatorcontrib><creatorcontrib>Li, Jingbo</creatorcontrib><title>The explanation of InN bandgap discrepancy based on experiments and first-principle calculations</title><title>Physics letters. A</title><description>Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm that the widening of InN optical bandgap reported before is caused by high density of free electrons. To find the contributor of the free electrons, the characteristic energetic levels of ON, VN and SiIn are investigated. We find that they are all high enough to uplift the optical bandgap from about 0.78 eV to 1.9 eV, which almost can't be enlarged further when it reaches 2.09 eV.</description><subject>Band gap</subject><subject>Chemical vapor deposition</subject><subject>Defect</subject><subject>Expansion</subject><subject>First principle calculation</subject><subject>Free electrons</subject><subject>Gallium nitrides</subject><subject>Indium nitride</subject><subject>Mathematical analysis</subject><subject>Solid state physics</subject><subject>Widening</subject><issn>0375-9601</issn><issn>1873-2429</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKt_QXLztGu-NtvclOJHoeilnmM2mdiU7e6abMX-e6PVszDDwPC8LzMvQpeUlJRQeb0ph_U-tTCakhFKS5KLiSM0obOaF0wwdYwmhNdVoSShp-gspQ0hWUnUBL2u1oDhc2hNZ8bQd7j3eNE94cZ07s0M2IVkIwyms_u8S-BwZjIPMWyhGxPOHPYhprEYYuhsGFrA1rR21_74pXN04k2b4OJ3TtHL_d1q_lgsnx8W89tlYbkQY-G9Ys5VDXDKa6s4F4oaz8DUzhOTm1QArJGMEgfOe157a6RTls9MUwnJp-jq4DvE_n0HadTbfDq0-THod0nPpBBMSqoyKQ-kjX1KEbzOl29N3GtK9HeieqP_EtXfiWqSi4ksvDkIIf_xESDqZAN0FlyIYEft-vCfxRd0cYXP</recordid><startdate>20110214</startdate><enddate>20110214</enddate><creator>Liu, Chaoren</creator><creator>Li, Jingbo</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110214</creationdate><title>The explanation of InN bandgap discrepancy based on experiments and first-principle calculations</title><author>Liu, Chaoren ; Li, Jingbo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-ff92dd5be3137c933491af2ea7df0adf005ee2b6210dedff37fca6d9c38ab5463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Band gap</topic><topic>Chemical vapor deposition</topic><topic>Defect</topic><topic>Expansion</topic><topic>First principle calculation</topic><topic>Free electrons</topic><topic>Gallium nitrides</topic><topic>Indium nitride</topic><topic>Mathematical analysis</topic><topic>Solid state physics</topic><topic>Widening</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Chaoren</creatorcontrib><creatorcontrib>Li, Jingbo</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physics letters. A</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Chaoren</au><au>Li, Jingbo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The explanation of InN bandgap discrepancy based on experiments and first-principle calculations</atitle><jtitle>Physics letters. A</jtitle><date>2011-02-14</date><risdate>2011</risdate><volume>375</volume><issue>7</issue><spage>1152</spage><epage>1155</epage><pages>1152-1155</pages><issn>0375-9601</issn><eissn>1873-2429</eissn><abstract>Indium nitride (InN) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (GaN) buffer through metal-organic chemical vapor deposition (MOCVD) method. Based on first-principle calculations, we confirm that the widening of InN optical bandgap reported before is caused by high density of free electrons. To find the contributor of the free electrons, the characteristic energetic levels of ON, VN and SiIn are investigated. We find that they are all high enough to uplift the optical bandgap from about 0.78 eV to 1.9 eV, which almost can't be enlarged further when it reaches 2.09 eV.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.physleta.2011.01.024</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0375-9601 |
| ispartof | Physics letters. A, 2011-02, Vol.375 (7), p.1152-1155 |
| issn | 0375-9601 1873-2429 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_864426619 |
| source | Elsevier ScienceDirect Journals |
| subjects | Band gap Chemical vapor deposition Defect Expansion First principle calculation Free electrons Gallium nitrides Indium nitride Mathematical analysis Solid state physics Widening |
| title | The explanation of InN bandgap discrepancy based on experiments and first-principle calculations |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T03%3A32%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20explanation%20of%20InN%20bandgap%20discrepancy%20based%20on%20experiments%20and%20first-principle%20calculations&rft.jtitle=Physics%20letters.%20A&rft.au=Liu,%20Chaoren&rft.date=2011-02-14&rft.volume=375&rft.issue=7&rft.spage=1152&rft.epage=1155&rft.pages=1152-1155&rft.issn=0375-9601&rft.eissn=1873-2429&rft_id=info:doi/10.1016/j.physleta.2011.01.024&rft_dat=%3Cproquest_cross%3E864426619%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=864426619&rft_id=info:pmid/&rft_els_id=S0375960111000715&rfr_iscdi=true |