Effect of Cr doping on the optical―electrical property of CuAlO2 thin films derived by chemical solution deposition
Cr-doped CuAlO2 thin films were deposited on sapphire substrates by chemical solution deposition. The polycrystalline phase structure of CuAl sub(1-x)Cr sub(x)O2 (x=0-0.015) thin films was confirmed using an X-ray diffractometer in grazing incidence mode. All specimens are phase-pure. Optical-electr...
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creator | JIANG, H. F ZHU, X. B LEI, H. C LI, G YANG, Z. R SONG, W. H DAI, J. M SUN, Y. P FU, Y. K |
description | Cr-doped CuAlO2 thin films were deposited on sapphire substrates by chemical solution deposition. The polycrystalline phase structure of CuAl sub(1-x)Cr sub(x)O2 (x=0-0.015) thin films was confirmed using an X-ray diffractometer in grazing incidence mode. All specimens are phase-pure. Optical-electrical property measurements show that with increasing Cr amount, electrical resistivity decreases from x=0 to 0.01, followed by an increase of x=0.015. This implies that two mechanisms affecting conductivity coexist and compete with each other. The predominance of the mechanisms changes with the increase in the Cr content. The detailed investigation on the transmittance in the ultraviolet region suggests that Cr doping can modify the structure of the top of valence band (VB) because Cr 3d states contribute to VB. Finally, 1% Cr doping can realize the best optimization of optical-electrical property with respect to transparent conducting oxide thin films. |
doi_str_mv | 10.1016/j.tsf.2010.12.025 |
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The detailed investigation on the transmittance in the ultraviolet region suggests that Cr doping can modify the structure of the top of valence band (VB) because Cr 3d states contribute to VB. Finally, 1% Cr doping can realize the best optimization of optical-electrical property with respect to transparent conducting oxide thin films.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.12.025</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Chromium ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Doping ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Grazing incidence ; Growth from solutions ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Resistivity ; Sapphire ; Thin films ; Ultraviolet</subject><ispartof>Thin solid films, 2011-02, Vol.519 (8), p.2559-2563</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c307t-95053ae48cd8a51b106de35658dcc449697fc3a8fe04a7cc183426e1285018e13</citedby><cites>FETCH-LOGICAL-c307t-95053ae48cd8a51b106de35658dcc449697fc3a8fe04a7cc183426e1285018e13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23878830$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JIANG, H. 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This implies that two mechanisms affecting conductivity coexist and compete with each other. The predominance of the mechanisms changes with the increase in the Cr content. The detailed investigation on the transmittance in the ultraviolet region suggests that Cr doping can modify the structure of the top of valence band (VB) because Cr 3d states contribute to VB. Finally, 1% Cr doping can realize the best optimization of optical-electrical property with respect to transparent conducting oxide thin films.</description><subject>Chromium</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Doping</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Grazing incidence</subject><subject>Growth from solutions</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Resistivity</subject><subject>Sapphire</subject><subject>Thin films</subject><subject>Ultraviolet</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNo9kE1OwzAQhS0EEqVwAHbeIFYpYzs_zrKqyo9UiQ2sLeOMwVUaBztB6o5LcEFOggMVq5knfe9p5hFyyWDBgJU328UQ7YLDpPkCeHFEZkxWdcYrwY7JDCCHrIQaTslZjFsAYJyLGRnX1qIZqLd0FWjje9e9Ut_R4Q2p7wdndPv9-YVtYsIkaB98j2HY_zrGZfvIE-s6al27i7TB4D6woS97at5w9-uIvh0HlzIb7H1003pOTqxuI14c5pw8366fVvfZ5vHuYbXcZEZANWR1AYXQmEvTSF2wFwZlg6IoC9kYk-d1WVfWCC0tQq4rY5gUOS-RcVkAk8jEnFz_5aar30eMg9q5aLBtdYd-jEqWec4BqiqR7I80wccY0Ko-uJ0Oe8VATQ2rrUoNq6lhxbhKDSfP1SFdx_SoDbozLv4buZCVlALED2p2fko</recordid><startdate>20110201</startdate><enddate>20110201</enddate><creator>JIANG, H. 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F</creatorcontrib><creatorcontrib>ZHU, X. B</creatorcontrib><creatorcontrib>LEI, H. C</creatorcontrib><creatorcontrib>LI, G</creatorcontrib><creatorcontrib>YANG, Z. R</creatorcontrib><creatorcontrib>SONG, W. H</creatorcontrib><creatorcontrib>DAI, J. M</creatorcontrib><creatorcontrib>SUN, Y. P</creatorcontrib><creatorcontrib>FU, Y. K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JIANG, H. F</au><au>ZHU, X. B</au><au>LEI, H. C</au><au>LI, G</au><au>YANG, Z. R</au><au>SONG, W. H</au><au>DAI, J. M</au><au>SUN, Y. P</au><au>FU, Y. K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Cr doping on the optical―electrical property of CuAlO2 thin films derived by chemical solution deposition</atitle><jtitle>Thin solid films</jtitle><date>2011-02-01</date><risdate>2011</risdate><volume>519</volume><issue>8</issue><spage>2559</spage><epage>2563</epage><pages>2559-2563</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Cr-doped CuAlO2 thin films were deposited on sapphire substrates by chemical solution deposition. The polycrystalline phase structure of CuAl sub(1-x)Cr sub(x)O2 (x=0-0.015) thin films was confirmed using an X-ray diffractometer in grazing incidence mode. All specimens are phase-pure. Optical-electrical property measurements show that with increasing Cr amount, electrical resistivity decreases from x=0 to 0.01, followed by an increase of x=0.015. This implies that two mechanisms affecting conductivity coexist and compete with each other. The predominance of the mechanisms changes with the increase in the Cr content. The detailed investigation on the transmittance in the ultraviolet region suggests that Cr doping can modify the structure of the top of valence band (VB) because Cr 3d states contribute to VB. Finally, 1% Cr doping can realize the best optimization of optical-electrical property with respect to transparent conducting oxide thin films.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.tsf.2010.12.025</doi><tpages>5</tpages></addata></record> |
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subjects | Chromium Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition Doping Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Grazing incidence Growth from solutions Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Resistivity Sapphire Thin films Ultraviolet |
title | Effect of Cr doping on the optical―electrical property of CuAlO2 thin films derived by chemical solution deposition |
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