Relationship between the Thermal Hardening of Ion-Implanted Resist and the Resist Removal Using Atomic Hydrogen
Using atomic hydrogen for its excellent reduction ability, we demonstrated the removal rates and the hardness of ion-implanted resists. Removal rates of B-ion implanted resists using atomic hydrogen decreased with increasing implantation dose. According to the hardness of the resists, the indentatio...
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Veröffentlicht in: | Journal of Photopolymer Science and Technology 2009/06/30, Vol.22(3), pp.325-328 |
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