Relationship between the Thermal Hardening of Ion-Implanted Resist and the Resist Removal Using Atomic Hydrogen

Using atomic hydrogen for its excellent reduction ability, we demonstrated the removal rates and the hardness of ion-implanted resists. Removal rates of B-ion implanted resists using atomic hydrogen decreased with increasing implantation dose. According to the hardness of the resists, the indentatio...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2009/06/30, Vol.22(3), pp.325-328
Hauptverfasser: Maruoka, Takeshi, Goto, Yousuke, Yamamoto, Masashi, Horibe, Hideo, Kusano, Eiji, Takao, Kazuhisa, Tagawa, Seiichi
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Sprache:eng
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