Annealing effects on the p-type ZnO films fabricated on GaAs substrate by atmospheric pressure metal organic chemical vapor deposition

▶ Intrinsic ZnO film fabricated on semi-insulating GaAs substrate by AP-MOCVD: p-type conductivity with a hole concentration of 3.2 × 10 18 cm −3. ▶ ZnO/GaAs post-annealed at 500–600 °C: p-type conductivity with hole concentrations ranging from 4.7 × 10 18 to 8.7 × 10 19 cm −3. The effects of post-a...

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Veröffentlicht in:	Journal of alloys and compounds 2011-02, Vol.509 (5), p.1980-1983
Hauptverfasser:	Huang, Yen-Chin, Weng, Li-Wei, Uen, Wu-Yih, Lan, Shan-Ming, Li, Zhen-Yu, Liao, Sen-Mao, Lin, Tai-Yuan, Yang, Tsun-Neng
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Annealing Atmospheric pressure Atmospheric pressure metal-organic chemical vapor deposition Barometric pressure Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Gallium arsenide Gallium arsenides Ii-vi semiconductors Ionization Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films P-type conductivity Photoluminescence Physics Post-annealing Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Zinc oxide ZnO
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