Molecular Challenges of Immersion and Extreme Ultraviolet (EUV) Resists

This paper outlines the major challenges for the development of 193 nm immersion and extreme ultraviolet (EUV) resists. The major issues for the implementation of 193 nm immersion are developing high index immersion fluids and high index lens materials to enable 32 nm half-pitch imaging. For EUV res...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2006, Vol.19(4), pp.487-499
Hauptverfasser: Dean, Kim R., Stark, David
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container_title Journal of Photopolymer Science and Technology
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Stark, David
description This paper outlines the major challenges for the development of 193 nm immersion and extreme ultraviolet (EUV) resists. The major issues for the implementation of 193 nm immersion are developing high index immersion fluids and high index lens materials to enable 32 nm half-pitch imaging. For EUV resists, reaction mechanisms are not well understood. In addition, the many constraints placed on EUV resists, such as needing low photospeed, low line width roughness, and low outgassing while achieving the desired resolution, make resist design very difficult.
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subjects 193 nm immersion
EUV resist
extreme ultraviolet (EUV)
Fluid dynamics
Fluid flow
Fluids
high index fluids
Immersion
immersion resist
Photopolymers
Resists
Roughness
Ultraviolet
title Molecular Challenges of Immersion and Extreme Ultraviolet (EUV) Resists
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