Characterization of chemical bath deposited CdS thin films at different deposition temperature

CdS thin films were deposited onto glass substrates by the chemical bath deposition (CBD). The influence of the deposition temperature varied from 55 °C to 85 °C in a step of 5 °C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. I...

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Veröffentlicht in:Journal of alloys and compounds 2010-03, Vol.493 (1), p.305-308
Hauptverfasser: Liu, Fangyang, Lai, Yanqing, Liu, Jun, Wang, Bo, Kuang, Sanshuang, Zhang, Zhian, Li, Jie, Liu, Yexiang
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container_end_page 308
container_issue 1
container_start_page 305
container_title Journal of alloys and compounds
container_volume 493
creator Liu, Fangyang
Lai, Yanqing
Liu, Jun
Wang, Bo
Kuang, Sanshuang
Zhang, Zhian
Li, Jie
Liu, Yexiang
description CdS thin films were deposited onto glass substrates by the chemical bath deposition (CBD). The influence of the deposition temperature varied from 55 °C to 85 °C in a step of 5 °C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. Increasing deposition temperature can promote phase transformation from cubic to hexagonal and improvement of crystallinity in CdS films. CdS film deposited at 75 °C shows compact and smooth surface, and excellent transmission in visible light range. The band gaps are found to decrease from 2.56 eV to 2.38 eV with the increase of deposition temperature, and the sub-band gap of about 2.32 eV is noticed at low deposition temperature of 55–70 °C. All CdS films are of n-type conductivity and the carrier concentration is in the order of 10 12–10 13 cm −3. The lowest resistivity and highest mobility obtained are in the case of 85 °C.
doi_str_mv 10.1016/j.jallcom.2009.12.088
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The influence of the deposition temperature varied from 55 °C to 85 °C in a step of 5 °C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. Increasing deposition temperature can promote phase transformation from cubic to hexagonal and improvement of crystallinity in CdS films. CdS film deposited at 75 °C shows compact and smooth surface, and excellent transmission in visible light range. The band gaps are found to decrease from 2.56 eV to 2.38 eV with the increase of deposition temperature, and the sub-band gap of about 2.32 eV is noticed at low deposition temperature of 55–70 °C. All CdS films are of n-type conductivity and the carrier concentration is in the order of 10 12–10 13 cm −3. 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subjects Cadmium sulfides
CdS
Chemical bath deposition
Compact disks
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Crystallinity
Deposition
Deposition temperature
Electrical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Energy gaps (solid state)
Exact sciences and technology
Ii-vi semiconductors
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film
Thin film structure and morphology
Thin films
title Characterization of chemical bath deposited CdS thin films at different deposition temperature
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