Characterization of chemical bath deposited CdS thin films at different deposition temperature
CdS thin films were deposited onto glass substrates by the chemical bath deposition (CBD). The influence of the deposition temperature varied from 55 °C to 85 °C in a step of 5 °C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. I...
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Veröffentlicht in: | Journal of alloys and compounds 2010-03, Vol.493 (1), p.305-308 |
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creator | Liu, Fangyang Lai, Yanqing Liu, Jun Wang, Bo Kuang, Sanshuang Zhang, Zhian Li, Jie Liu, Yexiang |
description | CdS thin films were deposited onto glass substrates by the chemical bath deposition (CBD). The influence of the deposition temperature varied from 55
°C to 85
°C in a step of 5
°C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. Increasing deposition temperature can promote phase transformation from cubic to hexagonal and improvement of crystallinity in CdS films. CdS film deposited at 75
°C shows compact and smooth surface, and excellent transmission in visible light range. The band gaps are found to decrease from 2.56
eV to 2.38
eV with the increase of deposition temperature, and the sub-band gap of about 2.32
eV is noticed at low deposition temperature of 55–70
°C. All CdS films are of n-type conductivity and the carrier concentration is in the order of 10
12–10
13
cm
−3. The lowest resistivity and highest mobility obtained are in the case of 85
°C. |
doi_str_mv | 10.1016/j.jallcom.2009.12.088 |
format | Article |
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°C to 85
°C in a step of 5
°C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. Increasing deposition temperature can promote phase transformation from cubic to hexagonal and improvement of crystallinity in CdS films. CdS film deposited at 75
°C shows compact and smooth surface, and excellent transmission in visible light range. The band gaps are found to decrease from 2.56
eV to 2.38
eV with the increase of deposition temperature, and the sub-band gap of about 2.32
eV is noticed at low deposition temperature of 55–70
°C. All CdS films are of n-type conductivity and the carrier concentration is in the order of 10
12–10
13
cm
−3. The lowest resistivity and highest mobility obtained are in the case of 85
°C.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2009.12.088</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Cadmium sulfides ; CdS ; Chemical bath deposition ; Compact disks ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Crystallinity ; Deposition ; Deposition temperature ; Electrical properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Energy gaps (solid state) ; Exact sciences and technology ; Ii-vi semiconductors ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film ; Thin film structure and morphology ; Thin films</subject><ispartof>Journal of alloys and compounds, 2010-03, Vol.493 (1), p.305-308</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c437t-3a197d30263c1b7fa9ae5f897c8ade596a548ae335c7f85449bb2263fe8fffe53</citedby><cites>FETCH-LOGICAL-c437t-3a197d30263c1b7fa9ae5f897c8ade596a548ae335c7f85449bb2263fe8fffe53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2009.12.088$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22544993$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Fangyang</creatorcontrib><creatorcontrib>Lai, Yanqing</creatorcontrib><creatorcontrib>Liu, Jun</creatorcontrib><creatorcontrib>Wang, Bo</creatorcontrib><creatorcontrib>Kuang, Sanshuang</creatorcontrib><creatorcontrib>Zhang, Zhian</creatorcontrib><creatorcontrib>Li, Jie</creatorcontrib><creatorcontrib>Liu, Yexiang</creatorcontrib><title>Characterization of chemical bath deposited CdS thin films at different deposition temperature</title><title>Journal of alloys and compounds</title><description>CdS thin films were deposited onto glass substrates by the chemical bath deposition (CBD). The influence of the deposition temperature varied from 55
°C to 85
°C in a step of 5
°C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. Increasing deposition temperature can promote phase transformation from cubic to hexagonal and improvement of crystallinity in CdS films. CdS film deposited at 75
°C shows compact and smooth surface, and excellent transmission in visible light range. The band gaps are found to decrease from 2.56
eV to 2.38
eV with the increase of deposition temperature, and the sub-band gap of about 2.32
eV is noticed at low deposition temperature of 55–70
°C. All CdS films are of n-type conductivity and the carrier concentration is in the order of 10
12–10
13
cm
−3. The lowest resistivity and highest mobility obtained are in the case of 85
°C.</description><subject>Cadmium sulfides</subject><subject>CdS</subject><subject>Chemical bath deposition</subject><subject>Compact disks</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Crystallinity</subject><subject>Deposition</subject><subject>Deposition temperature</subject><subject>Electrical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Energy gaps (solid state)</subject><subject>Exact sciences and technology</subject><subject>Ii-vi semiconductors</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLLDEQRoNcwbmjP0HIRu6q2zw63clKLoMvEFyoW0NNusJk6MeYZAT99fYwo1tXtTlf1VeHkHPOSs54fbku19B1buxLwZgpuSiZ1kdkxnUji6quzR8yY0aoQkutT8jflNaMMW4kn5HXxQoiuIwxfEIO40BHT90K--Cgo0vIK9riZkwhY0sX7RPNqzBQH7o-Uci0Dd5jxCF_U7sNGfsNRsjbiKfk2EOX8Oww5-Tl5vp5cVc8PN7eL_4_FK6STS4kcNO0kolaOr5sPBhA5bVpnIYWlalBVRpQSuUar1VVmeVSTLBH7acCSs7Jv_3eTRzftpiy7UNy2HUw4LhNVtdcNUrIaiLVnnRxTCmit5sYeogfljO702nX9qDT7nRaLuykc8pdHC5AmtT4CIML6ScsxK6VkRN3tedwevc9YLTJBRwctiGiy7Ydwy-XvgBkl4_E</recordid><startdate>20100318</startdate><enddate>20100318</enddate><creator>Liu, Fangyang</creator><creator>Lai, Yanqing</creator><creator>Liu, Jun</creator><creator>Wang, Bo</creator><creator>Kuang, Sanshuang</creator><creator>Zhang, Zhian</creator><creator>Li, Jie</creator><creator>Liu, Yexiang</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20100318</creationdate><title>Characterization of chemical bath deposited CdS thin films at different deposition temperature</title><author>Liu, Fangyang ; Lai, Yanqing ; Liu, Jun ; Wang, Bo ; Kuang, Sanshuang ; Zhang, Zhian ; Li, Jie ; Liu, Yexiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c437t-3a197d30263c1b7fa9ae5f897c8ade596a548ae335c7f85449bb2263fe8fffe53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Cadmium sulfides</topic><topic>CdS</topic><topic>Chemical bath deposition</topic><topic>Compact disks</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Crystallinity</topic><topic>Deposition</topic><topic>Deposition temperature</topic><topic>Electrical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Energy gaps (solid state)</topic><topic>Exact sciences and technology</topic><topic>Ii-vi semiconductors</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Fangyang</creatorcontrib><creatorcontrib>Lai, Yanqing</creatorcontrib><creatorcontrib>Liu, Jun</creatorcontrib><creatorcontrib>Wang, Bo</creatorcontrib><creatorcontrib>Kuang, Sanshuang</creatorcontrib><creatorcontrib>Zhang, Zhian</creatorcontrib><creatorcontrib>Li, Jie</creatorcontrib><creatorcontrib>Liu, Yexiang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Fangyang</au><au>Lai, Yanqing</au><au>Liu, Jun</au><au>Wang, Bo</au><au>Kuang, Sanshuang</au><au>Zhang, Zhian</au><au>Li, Jie</au><au>Liu, Yexiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of chemical bath deposited CdS thin films at different deposition temperature</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2010-03-18</date><risdate>2010</risdate><volume>493</volume><issue>1</issue><spage>305</spage><epage>308</epage><pages>305-308</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>CdS thin films were deposited onto glass substrates by the chemical bath deposition (CBD). The influence of the deposition temperature varied from 55
°C to 85
°C in a step of 5
°C on the crystallographic structure, morphology as well as optical and electrical properties was investigated in detail. Increasing deposition temperature can promote phase transformation from cubic to hexagonal and improvement of crystallinity in CdS films. CdS film deposited at 75
°C shows compact and smooth surface, and excellent transmission in visible light range. The band gaps are found to decrease from 2.56
eV to 2.38
eV with the increase of deposition temperature, and the sub-band gap of about 2.32
eV is noticed at low deposition temperature of 55–70
°C. All CdS films are of n-type conductivity and the carrier concentration is in the order of 10
12–10
13
cm
−3. The lowest resistivity and highest mobility obtained are in the case of 85
°C.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2009.12.088</doi><tpages>4</tpages></addata></record> |
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subjects | Cadmium sulfides CdS Chemical bath deposition Compact disks Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Crystallinity Deposition Deposition temperature Electrical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy gaps (solid state) Exact sciences and technology Ii-vi semiconductors Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film Thin film structure and morphology Thin films |
title | Characterization of chemical bath deposited CdS thin films at different deposition temperature |
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