High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0 0 0 1) 8° off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition ro...

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