Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure
In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO x layer in the TiN/SiO 2/FeO x /FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the...
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| Veröffentlicht in: | Thin solid films 2010-12, Vol.519 (5), p.1536-1539 |
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| container_issue | 5 |
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| container_title | Thin solid films |
| container_volume | 519 |
| creator | Feng, Li-Wei Chang, Yao-Feng Chang, Chun-Yen Chang, Ting-Chang Wang, Shin-Yuan Chiang, Pei-Wei Lin, Chao-Cheng Chen, Shih-Ching Chen, Shih-Cheng |
| description | In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO
x
layer in the TiN/SiO
2/FeO
x
/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO
x
transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO
2/FeO
x
/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. |
| doi_str_mv | 10.1016/j.tsf.2010.08.165 |
| format | Article |
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x
layer in the TiN/SiO
2/FeO
x
/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO
x
transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO
2/FeO
x
/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.08.165</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Electrodes ; FeOx ; Ferrous alloys ; Forming ; Intermetallics ; Iron compounds ; Oxidation ; Platinum compounds ; Resistance switching ; Switching ; Thin films</subject><ispartof>Thin solid films, 2010-12, Vol.519 (5), p.1536-1539</ispartof><rights>2010 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609010012988$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Feng, Li-Wei</creatorcontrib><creatorcontrib>Chang, Yao-Feng</creatorcontrib><creatorcontrib>Chang, Chun-Yen</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Wang, Shin-Yuan</creatorcontrib><creatorcontrib>Chiang, Pei-Wei</creatorcontrib><creatorcontrib>Lin, Chao-Cheng</creatorcontrib><creatorcontrib>Chen, Shih-Ching</creatorcontrib><creatorcontrib>Chen, Shih-Cheng</creatorcontrib><title>Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure</title><title>Thin solid films</title><description>In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO
x
layer in the TiN/SiO
2/FeO
x
/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO
x
transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO
2/FeO
x
/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions.</description><subject>Electrodes</subject><subject>FeOx</subject><subject>Ferrous alloys</subject><subject>Forming</subject><subject>Intermetallics</subject><subject>Iron compounds</subject><subject>Oxidation</subject><subject>Platinum compounds</subject><subject>Resistance switching</subject><subject>Switching</subject><subject>Thin films</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotkcFOAjEQhhujiYg-gLfePC1O2dLtxpMhoiYkGMO96XanUlJY3XZRPPkOHn07n8QCHppmZv75MjM_IZcMBgyYuF4OYrCDIaQY5ICJ0RHpMVmU2bDI2THpAXDIBJRwSs5CWAIAGw7zHvl5xte2qTvjKo-0xeBC1GuDNLy7aBZu_UIbS3WqeB3dBv2WxpSlE5zRD-r1Flt6AGBNqy1tPlztPndtcZEgXWt1gu0RE3yKFD2amPRIE0TTFUbts10T_n597yMaYtuZ2LV4Tk6s9gEv_v8-mU_u5uOHbDq7fxzfTjOUXGR1xSsGpRS5ASyNEVyzkYTClBWzFjUXKW2F4YUQuZYjrk16lvOqALR1nffJ1QGb9njrMES1csGg93qNTReUFGyUF7IQSXlzUGKaZuOwVcE4TNeqXZvWUnXjFAO1M0QtVTJE7QxRIFUyJP8DlB-EuQ</recordid><startdate>20101230</startdate><enddate>20101230</enddate><creator>Feng, Li-Wei</creator><creator>Chang, Yao-Feng</creator><creator>Chang, Chun-Yen</creator><creator>Chang, Ting-Chang</creator><creator>Wang, Shin-Yuan</creator><creator>Chiang, Pei-Wei</creator><creator>Lin, Chao-Cheng</creator><creator>Chen, Shih-Ching</creator><creator>Chen, Shih-Cheng</creator><general>Elsevier B.V</general><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20101230</creationdate><title>Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure</title><author>Feng, Li-Wei ; Chang, Yao-Feng ; Chang, Chun-Yen ; Chang, Ting-Chang ; Wang, Shin-Yuan ; Chiang, Pei-Wei ; Lin, Chao-Cheng ; Chen, Shih-Ching ; Chen, Shih-Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e846-db4b109863c0e9cc64a15807c9b1ffea460e9f6c47663a854ac54af44b70efdd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Electrodes</topic><topic>FeOx</topic><topic>Ferrous alloys</topic><topic>Forming</topic><topic>Intermetallics</topic><topic>Iron compounds</topic><topic>Oxidation</topic><topic>Platinum compounds</topic><topic>Resistance switching</topic><topic>Switching</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng, Li-Wei</creatorcontrib><creatorcontrib>Chang, Yao-Feng</creatorcontrib><creatorcontrib>Chang, Chun-Yen</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Wang, Shin-Yuan</creatorcontrib><creatorcontrib>Chiang, Pei-Wei</creatorcontrib><creatorcontrib>Lin, Chao-Cheng</creatorcontrib><creatorcontrib>Chen, Shih-Ching</creatorcontrib><creatorcontrib>Chen, Shih-Cheng</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feng, Li-Wei</au><au>Chang, Yao-Feng</au><au>Chang, Chun-Yen</au><au>Chang, Ting-Chang</au><au>Wang, Shin-Yuan</au><au>Chiang, Pei-Wei</au><au>Lin, Chao-Cheng</au><au>Chen, Shih-Ching</au><au>Chen, Shih-Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure</atitle><jtitle>Thin solid films</jtitle><date>2010-12-30</date><risdate>2010</risdate><volume>519</volume><issue>5</issue><spage>1536</spage><epage>1539</epage><pages>1536-1539</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO
x
layer in the TiN/SiO
2/FeO
x
/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO
x
transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO
2/FeO
x
/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2010.08.165</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Electrodes FeOx Ferrous alloys Forming Intermetallics Iron compounds Oxidation Platinum compounds Resistance switching Switching Thin films |
| title | Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure |
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