GeSn p-i-n photodetector for all telecommunication bands detection

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1...

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Veröffentlicht in:	Optics express 2011-03, Vol.19 (7), p.6400-6405
Hauptverfasser:	Su, Shaojian, Cheng, Buwen, Xue, Chunlai, Wang, Wei, Cao, Quan, Xue, Haiyun, Hu, Weixuan, Zhang, Guangze, Zuo, Yuhua, Wang, Qiming
Format:	Artikel
Sprache:	eng
Schlagworte:	Equipment Design Equipment Failure Analysis Germanium - chemistry Light Photometry - instrumentation Semiconductors Telecommunications - instrumentation Tin - chemistry
Online-Zugang:	Volltext
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