Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp
A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free...
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| Veröffentlicht in: | ACS applied materials & interfaces 2011-03, Vol.3 (3), p.836-841 |
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| creator | Horii, Yoshinori Ikawa, Mitsuhiro Chikamatsu, Masayuki Azumi, Reiko Kitagawa, Masahiko Konishi, Hisatoshi Yase, Kiyoshi |
| description | A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free energy. We used [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) as n-channel materials. The stamped thin-film transistors of C60MC12 achieved a high electron mobility of 0.39 cm2/(V s) and a current on−off ratio of 1 × 107. The mobility of the stamped C60MC12 thin-film transistors did not depend much on the surface free energy of the SiO2 gate insulator with and without surface treatment using a silane-coupling reagent. In particular, the stamped C60MC12 thin-film transistor exhibited a relatively high mobility of 0.1 cm2/(V s) on a high energy surface of untreated SiO2. In addition, a complementary inverter composed of an n-channel and a p-channel stamped thin-film transistor was demonstrated for the first time, which exhibits a maximum gain of 63 at a supply voltage of 50 V. |
| doi_str_mv | 10.1021/am101193y |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_858418104</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>858418104</sourcerecordid><originalsourceid>FETCH-LOGICAL-a314t-6a20053d0e34481a52a8b555f09b1be6226d6e2665025c19993b694255bbf2373</originalsourceid><addsrcrecordid>eNpt0MtKw0AUBuBBFFurC19AZiPiIjp3k6UWq0KhhbbrMJNM2ylzqTMJmLc3Uu3K1TmLj59zfgCuMXrAiOBH6TDCuKDdCRjigrEsJ5ycHnfGBuAipR1CghLEz8GAYCoEofkQuEWwrbIaTlprddReZy8y6Rr6bLyV3msLZ3Ejvangcmt8NjHWwWWUPpnUhJjgPBrf9F51cJWM30AJ58F2tXG62XY2GRu-pNdw0Ui3vwRna2mTvvqdI7CavC7H79l09vYxfp5mkmLWZEIShDitkaaM5VhyInPFOV-jQmGlBSGiFpoIwRHhFS6KgipRMMK5UmtCn-gI3B1y9zF8tjo1pTOp0tb2l4Q2lTnPGc4xYr28P8gqhpSiXpf7aJyMXYlR-VNueSy3tze_qa1yuj7KvzZ7cHsAskrlLrTR90_-E_QNg3t_-w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>858418104</pqid></control><display><type>article</type><title>Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp</title><source>MEDLINE</source><source>American Chemical Society Journals</source><creator>Horii, Yoshinori ; Ikawa, Mitsuhiro ; Chikamatsu, Masayuki ; Azumi, Reiko ; Kitagawa, Masahiko ; Konishi, Hisatoshi ; Yase, Kiyoshi</creator><creatorcontrib>Horii, Yoshinori ; Ikawa, Mitsuhiro ; Chikamatsu, Masayuki ; Azumi, Reiko ; Kitagawa, Masahiko ; Konishi, Hisatoshi ; Yase, Kiyoshi</creatorcontrib><description>A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free energy. We used [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) as n-channel materials. The stamped thin-film transistors of C60MC12 achieved a high electron mobility of 0.39 cm2/(V s) and a current on−off ratio of 1 × 107. The mobility of the stamped C60MC12 thin-film transistors did not depend much on the surface free energy of the SiO2 gate insulator with and without surface treatment using a silane-coupling reagent. In particular, the stamped C60MC12 thin-film transistor exhibited a relatively high mobility of 0.1 cm2/(V s) on a high energy surface of untreated SiO2. In addition, a complementary inverter composed of an n-channel and a p-channel stamped thin-film transistor was demonstrated for the first time, which exhibits a maximum gain of 63 at a supply voltage of 50 V.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/am101193y</identifier><identifier>PMID: 21366238</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Crystallization - methods ; Dimethylpolysiloxanes - chemistry ; Equipment Design ; Equipment Failure Analysis ; Fullerenes - chemistry ; Materials Testing ; Membranes, Artificial ; Nanotechnology - methods ; Organic Chemicals - chemistry ; Solubility ; Surface Properties ; Transistors, Electronic</subject><ispartof>ACS applied materials & interfaces, 2011-03, Vol.3 (3), p.836-841</ispartof><rights>Copyright © 2011 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a314t-6a20053d0e34481a52a8b555f09b1be6226d6e2665025c19993b694255bbf2373</citedby><cites>FETCH-LOGICAL-a314t-6a20053d0e34481a52a8b555f09b1be6226d6e2665025c19993b694255bbf2373</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/am101193y$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/am101193y$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/21366238$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Horii, Yoshinori</creatorcontrib><creatorcontrib>Ikawa, Mitsuhiro</creatorcontrib><creatorcontrib>Chikamatsu, Masayuki</creatorcontrib><creatorcontrib>Azumi, Reiko</creatorcontrib><creatorcontrib>Kitagawa, Masahiko</creatorcontrib><creatorcontrib>Konishi, Hisatoshi</creatorcontrib><creatorcontrib>Yase, Kiyoshi</creatorcontrib><title>Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp</title><title>ACS applied materials & interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free energy. We used [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) as n-channel materials. The stamped thin-film transistors of C60MC12 achieved a high electron mobility of 0.39 cm2/(V s) and a current on−off ratio of 1 × 107. The mobility of the stamped C60MC12 thin-film transistors did not depend much on the surface free energy of the SiO2 gate insulator with and without surface treatment using a silane-coupling reagent. In particular, the stamped C60MC12 thin-film transistor exhibited a relatively high mobility of 0.1 cm2/(V s) on a high energy surface of untreated SiO2. In addition, a complementary inverter composed of an n-channel and a p-channel stamped thin-film transistor was demonstrated for the first time, which exhibits a maximum gain of 63 at a supply voltage of 50 V.</description><subject>Crystallization - methods</subject><subject>Dimethylpolysiloxanes - chemistry</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Fullerenes - chemistry</subject><subject>Materials Testing</subject><subject>Membranes, Artificial</subject><subject>Nanotechnology - methods</subject><subject>Organic Chemicals - chemistry</subject><subject>Solubility</subject><subject>Surface Properties</subject><subject>Transistors, Electronic</subject><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpt0MtKw0AUBuBBFFurC19AZiPiIjp3k6UWq0KhhbbrMJNM2ylzqTMJmLc3Uu3K1TmLj59zfgCuMXrAiOBH6TDCuKDdCRjigrEsJ5ycHnfGBuAipR1CghLEz8GAYCoEofkQuEWwrbIaTlprddReZy8y6Rr6bLyV3msLZ3Ejvangcmt8NjHWwWWUPpnUhJjgPBrf9F51cJWM30AJ58F2tXG62XY2GRu-pNdw0Ui3vwRna2mTvvqdI7CavC7H79l09vYxfp5mkmLWZEIShDitkaaM5VhyInPFOV-jQmGlBSGiFpoIwRHhFS6KgipRMMK5UmtCn-gI3B1y9zF8tjo1pTOp0tb2l4Q2lTnPGc4xYr28P8gqhpSiXpf7aJyMXYlR-VNueSy3tze_qa1yuj7KvzZ7cHsAskrlLrTR90_-E_QNg3t_-w</recordid><startdate>20110323</startdate><enddate>20110323</enddate><creator>Horii, Yoshinori</creator><creator>Ikawa, Mitsuhiro</creator><creator>Chikamatsu, Masayuki</creator><creator>Azumi, Reiko</creator><creator>Kitagawa, Masahiko</creator><creator>Konishi, Hisatoshi</creator><creator>Yase, Kiyoshi</creator><general>American Chemical Society</general><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20110323</creationdate><title>Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp</title><author>Horii, Yoshinori ; Ikawa, Mitsuhiro ; Chikamatsu, Masayuki ; Azumi, Reiko ; Kitagawa, Masahiko ; Konishi, Hisatoshi ; Yase, Kiyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a314t-6a20053d0e34481a52a8b555f09b1be6226d6e2665025c19993b694255bbf2373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Crystallization - methods</topic><topic>Dimethylpolysiloxanes - chemistry</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Fullerenes - chemistry</topic><topic>Materials Testing</topic><topic>Membranes, Artificial</topic><topic>Nanotechnology - methods</topic><topic>Organic Chemicals - chemistry</topic><topic>Solubility</topic><topic>Surface Properties</topic><topic>Transistors, Electronic</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Horii, Yoshinori</creatorcontrib><creatorcontrib>Ikawa, Mitsuhiro</creatorcontrib><creatorcontrib>Chikamatsu, Masayuki</creatorcontrib><creatorcontrib>Azumi, Reiko</creatorcontrib><creatorcontrib>Kitagawa, Masahiko</creatorcontrib><creatorcontrib>Konishi, Hisatoshi</creatorcontrib><creatorcontrib>Yase, Kiyoshi</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials & interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Horii, Yoshinori</au><au>Ikawa, Mitsuhiro</au><au>Chikamatsu, Masayuki</au><au>Azumi, Reiko</au><au>Kitagawa, Masahiko</au><au>Konishi, Hisatoshi</au><au>Yase, Kiyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp</atitle><jtitle>ACS applied materials & interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2011-03-23</date><risdate>2011</risdate><volume>3</volume><issue>3</issue><spage>836</spage><epage>841</epage><pages>836-841</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>A polydimethylsiloxane stamp was applied for the first time to the fabrication of n-channel thin-film transistors based on soluble small molecule organic semiconducting materials. The stamping method was found to facilitate film transfer onto a gate insulator surface irrespective of its surface free energy. We used [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) as n-channel materials. The stamped thin-film transistors of C60MC12 achieved a high electron mobility of 0.39 cm2/(V s) and a current on−off ratio of 1 × 107. The mobility of the stamped C60MC12 thin-film transistors did not depend much on the surface free energy of the SiO2 gate insulator with and without surface treatment using a silane-coupling reagent. In particular, the stamped C60MC12 thin-film transistor exhibited a relatively high mobility of 0.1 cm2/(V s) on a high energy surface of untreated SiO2. In addition, a complementary inverter composed of an n-channel and a p-channel stamped thin-film transistor was demonstrated for the first time, which exhibits a maximum gain of 63 at a supply voltage of 50 V.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>21366238</pmid><doi>10.1021/am101193y</doi><tpages>6</tpages></addata></record> |
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| subjects | Crystallization - methods Dimethylpolysiloxanes - chemistry Equipment Design Equipment Failure Analysis Fullerenes - chemistry Materials Testing Membranes, Artificial Nanotechnology - methods Organic Chemicals - chemistry Solubility Surface Properties Transistors, Electronic |
| title | Soluble Fullerene-Based n-Channel Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp |
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