The feeble role of oxygen vacancies in magnetic coupling in ZnO based dilute magnetic semiconductors
The role of the oxygen vacancy (V(O)) as the dominant defect in ZnO in magnetic interactions of ZnO based dilute magnetic semiconductors (DMSs) was examined in detail using density functional theory. It was found that V(O) does not lead to a thermally activated carrier mediated magnetism or form mag...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2010-12, Vol.22 (48), p.486003-486003 |
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| container_title | Journal of physics. Condensed matter |
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| creator | Assadi, M H N Zhang, Y B Li, S |
| description | The role of the oxygen vacancy (V(O)) as the dominant defect in ZnO in magnetic interactions of ZnO based dilute magnetic semiconductors (DMSs) was examined in detail using density functional theory. It was found that V(O) does not lead to a thermally activated carrier mediated magnetism or form magnetic centers in the ZnO lattice. However, neutral V(O) may facilitate the ferromagnetism, but has a limited influence on the original antiferromagnetic coupling of the magnetic ions in oxygen stoichiometric ZnO DMSs. As a result, the ferromagnetism observed in previous experiments should be attributed to other defects such as hydrogen contamination or zinc interstitials. |
| doi_str_mv | 10.1088/0953-8984/22/48/486003 |
| format | Article |
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It was found that V(O) does not lead to a thermally activated carrier mediated magnetism or form magnetic centers in the ZnO lattice. However, neutral V(O) may facilitate the ferromagnetism, but has a limited influence on the original antiferromagnetic coupling of the magnetic ions in oxygen stoichiometric ZnO DMSs. As a result, the ferromagnetism observed in previous experiments should be attributed to other defects such as hydrogen contamination or zinc interstitials.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/22/48/486003</identifier><identifier>PMID: 21406761</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states ; Exact sciences and technology ; Exchange and superexchange interactions ; Magnetic properties and materials ; Magnetic semiconductors ; Magnetically ordered materials: other intrinsic properties ; Methods of electronic structure calculations ; Physics ; Studies of specific magnetic materials</subject><ispartof>Journal of physics. 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As a result, the ferromagnetism observed in previous experiments should be attributed to other defects such as hydrogen contamination or zinc interstitials.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Exchange and superexchange interactions</subject><subject>Magnetic properties and materials</subject><subject>Magnetic semiconductors</subject><subject>Magnetically ordered materials: other intrinsic properties</subject><subject>Methods of electronic structure calculations</subject><subject>Physics</subject><subject>Studies of specific magnetic materials</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqF0E1r3DAQBmBRUppt2r8QdAk5uStZHx4dQ0g_IJBLCqUXIcujrYJtOZYdkn9fm91uDi0UhATSMzPiJeScs0-cAWyZUaIAA3JbllsJy9KMiTdkw4XmhZbw44RsjuiUvM_5gTEmQch35LTkkulK8w1p7n8hDYh1i3RMy5YCTc8vO-zpk_Ou9xEzjT3t3K7HKXrq0zy0sd-tlz_7O1q7jA1tYjtP-KoydtGnvpn9lMb8gbwNrs348XCeke-fb-6vvxa3d1--XV_dFl6WbCoEl6ZWtSkNgAleCIFeqaoCFcDVKJ1SUkjpqyCNDkJBrXXgrgLpTQhNLc7I5b7vMKbHGfNku5g9tq3rMc3ZgqokcFmpReq99GPKecRghzF2bnyxnNk1YLtmZ9fsbFlaCXYf8FJ4fhgx1x02x7I_iS7g4gBc9q4N45phfnVClUYIWFyxdzENx9d_D7VDExbP__b_-exvrdigCQ</recordid><startdate>20101208</startdate><enddate>20101208</enddate><creator>Assadi, M H N</creator><creator>Zhang, Y B</creator><creator>Li, S</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20101208</creationdate><title>The feeble role of oxygen vacancies in magnetic coupling in ZnO based dilute magnetic semiconductors</title><author>Assadi, M H N ; Zhang, Y B ; Li, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-3149b5b929889fc333ec557785f8abe4a554344c7f496f358b66f1a784c9ffdb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Exchange and superexchange interactions</topic><topic>Magnetic properties and materials</topic><topic>Magnetic semiconductors</topic><topic>Magnetically ordered materials: other intrinsic properties</topic><topic>Methods of electronic structure calculations</topic><topic>Physics</topic><topic>Studies of specific magnetic materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Assadi, M H N</creatorcontrib><creatorcontrib>Zhang, Y B</creatorcontrib><creatorcontrib>Li, S</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of physics. 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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Exchange and superexchange interactions Magnetic properties and materials Magnetic semiconductors Magnetically ordered materials: other intrinsic properties Methods of electronic structure calculations Physics Studies of specific magnetic materials |
| title | The feeble role of oxygen vacancies in magnetic coupling in ZnO based dilute magnetic semiconductors |
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