Electrochemical atomic layer deposition of copper nanofilms on ruthenium

As ULSI scales to smaller and smaller dimensions, it has become necessary to form layers of materials only a few nm thick. In addition, trenches are now being incorporated in ULSI formation which require conformal coating and will not be amenable to CMP. Atomic layer deposition (ALD) is being develo...

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Veröffentlicht in:	Journal of crystal growth 2010-04, Vol.312 (8), p.1271-1276
Hauptverfasser:	Gebregziabiher, Daniel K., Kim, Youn-Geun, Thambidurai, Chandru, Ivanova, Valentina, Haumesser, Paul-Henri, Stickney, John L.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Surfaces A2. Atomic layer epitaxy AUGER ELECTRON SPECTROSCOPY B1. Metals Carbon Copper Cross-disciplinary physics: materials science rheology DEPOSITION Electrodeposition, electroplating Exact sciences and technology Growth from vapor INTEGRATED CIRCUITS ION BOMBARDMENT Lead (metal) Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy MICA MICROSTRUCTURES Nanostructure Physics Ruthenium Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation THIN FILMS Ultra Large Scale Integration Underpotential deposition
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