In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells

A strain-balanced InGaAs/GaAsP multiple quantum-wells (MQWs) structure was grown by metal organic vapor phase epitaxy (MOVPE) on GaAs substrate, aiming at a middle cell that improves current matching in a tandem solar cell. In order to detect the instant of strain relaxation in the course of MOVPE,...

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Veröffentlicht in:	Journal of crystal growth 2010-04, Vol.312 (8), p.1364-1369
Hauptverfasser:	Wang, Yunpeng, Onitsuka, Ryusuke, Deura, Momoko, Yu, Wen, Sugiyama, Masakazu, Nakano, Yoshiaki
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Surface structure A3. Metalorganic vapor phase epitaxy Anisotropy Applied sciences B1. Gallium arsenic B2. Semiconducting III–V materials Barriers Cross-disciplinary physics: materials science rheology Energy Exact sciences and technology Gallium arsenide Indium gallium arsenides Lattices Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Natural energy Other topics in nanoscale materials and structures Photovoltaic conversion Physics Quantum wells Reflectance Reflectivity Solar cells. Photoelectrochemical cells Solar energy Strain Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase
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