Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy
An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a re...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2010-03, Vol.22 (8), p.085006-085006 |
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| container_title | Journal of physics. Condensed matter |
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| creator | UNSWORTH, P WEIGHTMAN, P |
| description | An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si. |
| doi_str_mv | 10.1088/0953-8984/22/8/085006 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_855704146</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>855704146</sourcerecordid><originalsourceid>FETCH-LOGICAL-p147t-8053c8c44ff134683ad26c8bd212849b1c62a62bccf32339642f0d686862f5763</originalsourceid><addsrcrecordid>eNo9kMtOwzAQRS0EEqXwCUjeIGAR4lccZ1lVpVRUYsFD7CLHsdugJA62I5EtX06iVmgWM3Pn3LsYAK4xesBIiBhlCY1EJlhMSDyuIkGIn4AZphxHnInPUzD7Z87BhfdfCCEmKJuB303rq90-wKoNFoa9hrVVsoalHvUwQGugDzJoD2WArxUcxcM8ob4vGtvaWg7ajcd4re8QwvcRgT8QT4naGak0NM42k_l5-wEX_W6EfadVcNYr2w2X4MzI2uurY5-D98fV2_Ip2r6sN8vFNuowS0MkUEKVUIwZgynjgsqScCWKkmAiWFZgxYnkpFDKUEJpxhkxqORiLGKSlNM5uD3kds5-99qHvKm80nUtW217n4skSRHDbCJvjqT04zOMk62qfN65qpFuyAlhKeEspX8rz2-1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>855704146</pqid></control><display><type>article</type><title>Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>UNSWORTH, P ; WEIGHTMAN, P</creator><creatorcontrib>UNSWORTH, P ; WEIGHTMAN, P</creatorcontrib><description>An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/22/8/085006</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>Bristol: Institute of Physics</publisher><subject>Auger spectroscopy ; Augers ; Condensed matter ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Density of states ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Germanium ; Physics ; Screening ; Silicon ; Spectra ; Thin films and multilayers</subject><ispartof>Journal of physics. Condensed matter, 2010-03, Vol.22 (8), p.085006-085006</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22472647$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>UNSWORTH, P</creatorcontrib><creatorcontrib>WEIGHTMAN, P</creatorcontrib><title>Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy</title><title>Journal of physics. Condensed matter</title><description>An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si.</description><subject>Auger spectroscopy</subject><subject>Augers</subject><subject>Condensed matter</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Density of states</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Germanium</subject><subject>Physics</subject><subject>Screening</subject><subject>Silicon</subject><subject>Spectra</subject><subject>Thin films and multilayers</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqXwCUjeIGAR4lccZ1lVpVRUYsFD7CLHsdugJA62I5EtX06iVmgWM3Pn3LsYAK4xesBIiBhlCY1EJlhMSDyuIkGIn4AZphxHnInPUzD7Z87BhfdfCCEmKJuB303rq90-wKoNFoa9hrVVsoalHvUwQGugDzJoD2WArxUcxcM8ob4vGtvaWg7ajcd4re8QwvcRgT8QT4naGak0NM42k_l5-wEX_W6EfadVcNYr2w2X4MzI2uurY5-D98fV2_Ip2r6sN8vFNuowS0MkUEKVUIwZgynjgsqScCWKkmAiWFZgxYnkpFDKUEJpxhkxqORiLGKSlNM5uD3kds5-99qHvKm80nUtW217n4skSRHDbCJvjqT04zOMk62qfN65qpFuyAlhKeEspX8rz2-1</recordid><startdate>20100303</startdate><enddate>20100303</enddate><creator>UNSWORTH, P</creator><creator>WEIGHTMAN, P</creator><general>Institute of Physics</general><scope>IQODW</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100303</creationdate><title>Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy</title><author>UNSWORTH, P ; WEIGHTMAN, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p147t-8053c8c44ff134683ad26c8bd212849b1c62a62bccf32339642f0d686862f5763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Auger spectroscopy</topic><topic>Augers</topic><topic>Condensed matter</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Density of states</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Germanium</topic><topic>Physics</topic><topic>Screening</topic><topic>Silicon</topic><topic>Spectra</topic><topic>Thin films and multilayers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>UNSWORTH, P</creatorcontrib><creatorcontrib>WEIGHTMAN, P</creatorcontrib><collection>Pascal-Francis</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>UNSWORTH, P</au><au>WEIGHTMAN, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy</atitle><jtitle>Journal of physics. Condensed matter</jtitle><date>2010-03-03</date><risdate>2010</risdate><volume>22</volume><issue>8</issue><spage>085006</spage><epage>085006</epage><pages>085006-085006</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><abstract>An analysis of the differences observed between the Si KLV Auger spectra of the Si/Ge(001)-2 X 1 interface and pure Si indicates that the electronic structure of the interface is characterized by a reduction in the local p DOS at the Si sites and a transfer of p valence charge from Si to Ge. As a result, the screening of core-ionized Si sites at the interface is significantly shifted towards s screening compared with the situation for pure Si. It is possible that there is an increase in the on-site electron correlation energy, UP, for Si sites at the interface as compared with pure Si.</abstract><cop>Bristol</cop><pub>Institute of Physics</pub><doi>10.1088/0953-8984/22/8/085006</doi><tpages>1</tpages></addata></record> |
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| ispartof | Journal of physics. Condensed matter, 2010-03, Vol.22 (8), p.085006-085006 |
| issn | 0953-8984 1361-648X |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Auger spectroscopy Augers Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Density of states Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Germanium Physics Screening Silicon Spectra Thin films and multilayers |
| title | Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T09%3A27%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Insight%20into%20the%20local%20density%20of%20states%20at%20Si%20sites%20at%20the%20submonolayer%20Si/Ge(001)-2%20x%201%20interface%20from%20Si%20KLV%20Auger%20spectroscopy&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=UNSWORTH,%20P&rft.date=2010-03-03&rft.volume=22&rft.issue=8&rft.spage=085006&rft.epage=085006&rft.pages=085006-085006&rft.issn=0953-8984&rft.eissn=1361-648X&rft.coden=JCOMEL&rft_id=info:doi/10.1088/0953-8984/22/8/085006&rft_dat=%3Cproquest_pasca%3E855704146%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=855704146&rft_id=info:pmid/&rfr_iscdi=true |