Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles

We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed usi...

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Veröffentlicht in:	Nanotechnology 2010-08, Vol.21 (31), p.315201-315201
Hauptverfasser:	de Luna Bugallo, Andres, Tchernycheva, Maria, Jacopin, Gwenole, Rigutti, Lorenzo, Julien, François Henri, Chou, Shu-Ting, Lin, Yuan-Ting, Tseng, Po-Han, Tu, Li-Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Detectors Drying Encapsulation Gallium nitrides Molecular beam epitaxy Nanocomposites Nanomaterials Nanostructure Nanowires Photodetectors
Online-Zugang:	Volltext
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